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HGTG30N60C3D Datasheet, Equivalent, N-Channel IGBT.

N-Channel IGBT

N-Channel IGBT

 

 

 

Part HGTG30N60C3D
Description N-Channel IGBT
Feature UFS Series N-Channel IGBT with Anti-Para llel Hyperfast Diodes 63 A, 600 V HGTG3 0N60C3D The HGTG30N60C3D is a MOS gated high voltage switching device combinin g the best features of MOSFETs and bipo lar transistors.
The device has the hig h input impedance of a MOSFET and the l ow on−state conduction loss of a bipo lar transistor.
The much lower on−sta te voltage drop varies only moderately between 25°C and 150°C.
The IGBT used is the development type TA49051.
The d iode used in anti−parallel with the I GBT is the development type TA49053.
Th is IGBT is ideal for many high voltage switching applications .
Manufacture ON Semiconductor
Datasheet
Download HGTG30N60C3D Datasheet
Part HGTG30N60C3D
Description N-Channel IGBT
Feature UFS Series N-Channel IGBT with Anti-Para llel Hyperfast Diodes 63 A, 600 V HGTG3 0N60C3D The HGTG30N60C3D is a MOS gated high voltage switching device combinin g the best features of MOSFETs and bipo lar transistors.
The device has the hig h input impedance of a MOSFET and the l ow on−state conduction loss of a bipo lar transistor.
The much lower on−sta te voltage drop varies only moderately between 25°C and 150°C.
The IGBT used is the development type TA49051.
The d iode used in anti−parallel with the I GBT is the development type TA49053.
Th is IGBT is ideal for many high voltage switching applications .
Manufacture ON Semiconductor
Datasheet
Download HGTG30N60C3D Datasheet

HGTG30N60C3D

HGTG30N60C3D
HGTG30N60C3D

HGTG30N60C3D

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