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HGTG30N60A4D Datasheet, Equivalent, N-Channel IGBT.

N-Channel IGBT

N-Channel IGBT

 

 

 

Part HGTG30N60A4D
Description N-Channel IGBT
Feature SMPS Series N-Channel IGBT with Anti-Par allel Hyperfast Diode 600 V HGTG30N60A4 D The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar t ransistors.
This device has the high in put impedance of a MOSFET and the low o n−state conduction loss of a bipolar transistor.
The much lower on−state v oltage drop varies only moderately betw een 25°C and 150°C.
The IGBT used is the development type TA49343.
The diode used in anti−parallel is the develop ment type TA49373.
This IGBT is ideal f or many high voltage switching applicat ions operating at high .
Manufacture ON Semiconductor
Datasheet
Download HGTG30N60A4D Datasheet
Part HGTG30N60A4D
Description N-Channel IGBT
Feature SMPS Series N-Channel IGBT with Anti-Par allel Hyperfast Diode 600 V HGTG30N60A4 D The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar t ransistors.
This device has the high in put impedance of a MOSFET and the low o n−state conduction loss of a bipolar transistor.
The much lower on−state v oltage drop varies only moderately betw een 25°C and 150°C.
The IGBT used is the development type TA49343.
The diode used in anti−parallel is the develop ment type TA49373.
This IGBT is ideal f or many high voltage switching applicat ions operating at high .
Manufacture ON Semiconductor
Datasheet
Download HGTG30N60A4D Datasheet

HGTG30N60A4D

HGTG30N60A4D
HGTG30N60A4D

HGTG30N60A4D

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