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HGTG10N120BND Datasheet, Equivalent, N-Channel IGBT.

N-Channel IGBT

N-Channel IGBT

 

 

 

Part HGTG10N120BND
Description N-Channel IGBT
Feature NPT Series N-Channel IGBT with Anti-Para llel Hyperfast Diode 35 A, 1200 V HGTG1 0N120BND The HGTG10N120BND is a Non−P unch Through (NPT) IGBT design.
This is a new member of the MOS gated high vol tage switching IGBT family.
IGBTs combi ne the best features of MOSFETs and bip olar transistors.
This device has the h igh input impedance of a MOSFET and the low on−state conduction loss of a bi polar transistor.
The IGBT used is the development type TA49290.
The Diode use d is the development type TA49189.
The IGBT is ideal for many high voltage swi tching applications operating at modera te frequencies whe .
Manufacture ON Semiconductor
Datasheet
Download HGTG10N120BND Datasheet
Part HGTG10N120BND
Description N-Channel IGBT
Feature NPT Series N-Channel IGBT with Anti-Para llel Hyperfast Diode 35 A, 1200 V HGTG1 0N120BND The HGTG10N120BND is a Non−P unch Through (NPT) IGBT design.
This is a new member of the MOS gated high vol tage switching IGBT family.
IGBTs combi ne the best features of MOSFETs and bip olar transistors.
This device has the h igh input impedance of a MOSFET and the low on−state conduction loss of a bi polar transistor.
The IGBT used is the development type TA49290.
The Diode use d is the development type TA49189.
The IGBT is ideal for many high voltage swi tching applications operating at modera te frequencies whe .
Manufacture ON Semiconductor
Datasheet
Download HGTG10N120BND Datasheet

HGTG10N120BND

HGTG10N120BND
HGTG10N120BND

HGTG10N120BND

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