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C3M0045065K Datasheet, Equivalent, Power MOSFET.

Silicon Carbide Power MOSFET

Silicon Carbide Power MOSFET

 

 

 

Part C3M0045065K
Description Silicon Carbide Power MOSFET
Feature VDS 650 V C3M0045065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) 49 A 45 mΩ N-Cha nnel Enhancement Mode Feature s Package
• C3MTM SiC MOSFET techno logy
• Optimized package with separa te driver source pin
• 8mm of creepa ge distance between drain and source High blocking voltage with low on-re sistance
• High-speed switching with low capacitances

• Fast intrin sic diode with low reverse recovery (Qr r) Halogen free, RoHS compliant Benefi ts
• Reduce switching losses and mini mize gate ringing
• Higher system eff iciency
• Reduce cooling requiremen .
Manufacture Cree
Datasheet
Download C3M0045065K Datasheet
Part C3M0045065K
Description Silicon Carbide Power MOSFET
Feature VDS 650 V C3M0045065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) 49 A 45 mΩ N-Cha nnel Enhancement Mode Feature s Package
• C3MTM SiC MOSFET techno logy
• Optimized package with separa te driver source pin
• 8mm of creepa ge distance between drain and source High blocking voltage with low on-re sistance
• High-speed switching with low capacitances

• Fast intrin sic diode with low reverse recovery (Qr r) Halogen free, RoHS compliant Benefi ts
• Reduce switching losses and mini mize gate ringing
• Higher system eff iciency
• Reduce cooling requiremen .
Manufacture Cree
Datasheet
Download C3M0045065K Datasheet

C3M0045065K

C3M0045065K
C3M0045065K

C3M0045065K

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