CAS300M12BM2

CAS300M12BM2 5 1200 V, 300 A, Silicon Carbide, Half-Bridge Module VDS IDS4 1200 V 3 300 A 2 D Technical Features Industry Standard 62 mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator C V+ G1 K1 Mid G2 K2 V- Applications Induction Heating Motor Drives Renewables Railway Auxiliary & Traction EV Fast Charging UPS and SMPS System Benefits 3 62 mm Form Factor Enables System Retrofit Increased System Efficiency, due to Low Switching & Conduction Losses of SiC B 4 5 1 Key Parameters 6 7 2 Parameter Symbol Min. Typ. Max.A Unit Conditions Note Drain-Source Voltage VDS 1200 TC = 25 °C Gate-Source Voltage, Maximum Value Gate-Source Voltage, Recommended VGS(max) VGS(op) -10 +25 -5/+20 V Transient 5 Static 4 Note 1 3 Fig. 32 2 DC Continuous Drain Current DC Source-Drain Current (Schottky Diode) Pulsed Drain-Source Current Power Dissipation ID ISD(SD) IDM PD 498 345 547 1500 1786 VGS = 20 V, TC = 25 °C, TVJ ≤ 150 °C VGS = 20 V, TC = 90 °C, TVJ ≤ 150 °C Notes A VGS = -5 V, TC = 25 °C, TVJ ≤ 150 °C 2, 3 Fig. 20 tPmax limited by TVJmax VGS = 20 V, TC = 25 °C W TC = 25 °C, TVJ ≤ 150 °C Note 4 Fig. 20 Virtual Junction Temperature TVJ(op) -40 150 °C Note (1): Recommended turn-on gate voltage is 20 V with ±5 % regulation tolerance Note (2): Current limit...