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BSB044N08NN3 Datasheet, Equivalent, Power MOSFET.

Power MOSFET

Power MOSFET

 

 

 

Part BSB044N08NN3
Description Power MOSFET
Feature BSB044N08NN3 G OptiMOS™3 Power-MOSFET Features
• Optimized technology for DC/DC converters
• Excellent gate cha rge x R DS(on) product (FOM)
• Superi or thermal resistance
• Dual sided co oling
• low parasitic inductance Pro duct Summary VDS RDS(on),max ID 80 V 4 .
4 mW 90 A CanPAKTM M MG-WDSON-2
• Low profile (<0.
7mm)
• N-channel, no rmal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for tar get applications
• Compatible with Di rectFET® package MN footprint and outl ine2) Type BSB044N08NN3 G Package MG- WDSON-2 Outline MN Marking 0208 Maxi .
Manufacture Infineon
Datasheet
Download BSB044N08NN3 Datasheet
Part BSB044N08NN3
Description Power MOSFET
Feature BSB044N08NN3 G OptiMOS™3 Power-MOSFET Features
• Optimized technology for DC/DC converters
• Excellent gate cha rge x R DS(on) product (FOM)
• Superi or thermal resistance
• Dual sided co oling
• low parasitic inductance Pro duct Summary VDS RDS(on),max ID 80 V 4 .
4 mW 90 A CanPAKTM M MG-WDSON-2
• Low profile (<0.
7mm)
• N-channel, no rmal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for tar get applications
• Compatible with Di rectFET® package MN footprint and outl ine2) Type BSB044N08NN3 G Package MG- WDSON-2 Outline MN Marking 0208 Maxi .
Manufacture Infineon
Datasheet
Download BSB044N08NN3 Datasheet

BSB044N08NN3

BSB044N08NN3
BSB044N08NN3

BSB044N08NN3

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