FDS6898AZ-F085

FDS6898AZ-F085 Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET FDS6898AZ-F085 Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V Low gate charge (16 nC typical) ESD protection diode (note 3) These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. High performance trench technology for extremely low RDS(ON) High power and current handling capability Qualified to AEC Q101 RoHS Compliant DD2DD1DD1 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 5 4 6 Q1 3 7 2 Q2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS689...