MTD20N06HDL

MTD20N06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low−voltage, high−speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients. Features Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Pb−Free Package is Available MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) VDSS 60 VDGR 60 Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous @ 25°C Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 ms) VGS VGSM ID ID IDM ± 15 ± 20 20 12 60 Total Power Dissipation Derate above 25°C PD 40 0.32 Total Power Dissipation @ TC = 25°C (Note 1) 1.75 Operating and Storage Temperature Range TJ, Tstg − 55 to 150 Unit Vdc Vdc Vdc Vpk ...