Document
D Controlled Baseline
− One Assembly/Test Site, One Fabrication Site
D Enhanced Diminishing Manufacturing
Sources (DMS) Support
D Enhanced Product-Change Notification D Qualification Pedigree† D Inputs Are TTL-Voltage Compatible D Latch-Up Performance Exceeds 250 mA Per
JESD 17
D ESD Protection Exceeds JESD 22
− 2000-V Human-Body Model (A114-A) − 200-V Machine Model (A115-A) − 1000-V Charged-Device Model (C101)
† Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
SN74AHCT541ĆEP OCTAL BUFFER/DRIVER WITH 3ĆSTATE OUTPUTS
SCAS778 − SEPTEMBER 2004
DW PACKAGE (TOP VIEW)
OE1 1 A1 2 A2 3 A3 4 A4 5 A5 6 A6 7 A7 8 A8 9
GND 10
20 VCC 19 OE2 18 Y1 17 Y2 16 Y3 15 Y4 14 Y5 13 Y6 12 Y7 11 Y8
description/ordering information
The SN74AHCT541 octal buffer/driver is ideal for driving bus lines or buffer memory address registers. This device features inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.
The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all corresponding outputs are in the high-impedance state. The outputs provide noninverted data when they are not in the high-impedance state.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
ORDERING INFORMATION
TA
PACKAGE‡
ORDERABLE PART NUMBER
TOP-SIDE MARKING
−40°C to 85°C
SOIC − DW
Tape and reel SN74AHCT541IDWREP AHCT541EP
‡ Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are
available at www.ti.com/sc/package.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright 2004, Texas Instruments Incorporated 1
SN74AHCT541ĆEP OCTAL BUFFER/DRIVER WITH 3ĆSTATE OUTPUTS
SCAS778 − SEPTEMBER 2004
FUNCTION TABLE (each buffer/driver)
INPUTS OE1 OE2 A
OUTPUT Y
L
L
L
L
L
L
H
H
H
X
X
Z
X
H
X
Z
logic diagram (positive logic)
1 OE1
19 OE2
A1 2
18 Y1
To Seven Other Channels
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 7 V Input voltage range, VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 7 V Output voltage range, VO (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to VCC + 0.5 V Input clamp current, IIK (VI < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −20 mA Output clamp current, IOK (VO < 0 or VO > VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 mA Continuous output current, IO (VO = 0 to VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25 mA Continuous current through VCC or GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±75 mA Package thermal impedance, θJA (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58°C/W Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. The package ther.