Document
IntelliMAXt 28 V, Over-Voltage, Over-Current Protection Load Switch with Adjustable Current-Limit Control
FPF2595
Description The FPF2595 advanced load−management switch targets
applications requiring a highly integrated solution. It disconnects loads powered from the DC power rail (<6 V) with stringent off−state current targets and high load capacitances (<100 mF). The FPF2595 consists of a slew−rate controlled low−impedance MOSFET switch (35 mW typical) and integrated analog features. The slew−rate controlled turn−on characteristic prevents inrush current and the resulting excessive voltage droop on power rails. FPF2595 has over−voltage protection and over− temperature protection.
The FPF2595 has a True Reverse−Current Blocking (TRCB) function that obstructs unwanted reverse current from VOUT to VIN during ON and OFF states. The exceptionally low off−state current drain (<2 mA maximum) facilitates compliance with standby power requirements. The input voltage range operates from 2.5 V to 5.5 VDC to support a wide range of applications in consumer, optical, medical, storage, portable, and industrial−device power management. Switch control is managed by a logic input (active HIGH) capable of interfacing directly with low−voltage control signal / General−Purpose Input / Output (GPIO) without an external pull−down resistor.
The device is packaged in advanced, fully “green” compliant, 1.3 mm x 1.8 mm, Wafer−Level Chip−Scale Packages (WLCSP).
Features
• VIN: 2.5 V~5.5 V • 28 V Absolute Ratings at VOUT • Current Capability: 3.9 A
♦ Typ 0.1 A~3.5 A with 10% Accuracy
• RON: Typ. 35 mW & Max. 50 mW at 5 VIN and 1 A IOUT • Output OVP: Min. = 5.6 V, Typ. = 5.8 V, Max. = 6 V • No Output Discharge During Off State • Open−Drain OCP on FLAGB • Thermal Shutdown • Under−Voltage Lockout (UVLO) • True Reverse−Current Blocking (TRCB) • Logic CMOS IO Meets JESD76 Standard for GPIO Interface and
Related Power Supply Requirements
DATA SHEET www.onsemi.com
WLCSP12 1.3x1.8x0.495 CASE 567RA
MARKING DIAGRAM
TY&K &.&2&Z
TY = Device Code &K = 2−Digits Lot Run Traceability Code &. = Pin One Dot &2 = 2−Digit Date Code &Z = Assembly Plant Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of this data sheet.
Features (continued)
• ESD Protected:
♦ Human Body Model: >2 kV ♦ Charged Device Model: >1.0 kV ♦ IEC61000−4−2 Air Discharge: >15 kV ♦ IEC61000−4−2 Contact Discharge:
>8 kV
• This is a Pb−Free Device
Applications
• Type C Power Source Switch • Computing, Monitor • Portable Devices
© Semiconductor Components Industries, LLC, 2015
1
April, 2022 − Rev. 2
Publication Order Number: FPF2595/D
FPF2595
APPLICATION DIAGRAM
Battery
5 V Boost CIN
IO
AP
Vin ON ISET
FPF2595
VIO Rpull−up
Vout
OCP FLAGB
COUT
USB Connector
OTG Device
GND
IO
NOTE: 1. CIN and COUT capacitors recommended for improvement of device stability.
Figure 1. Typical Application
FUNCTIONAL BLOCK DIAGRAM
HV Power Device TRCB
V IN
UVLO
Current Limit
OVP
V OUT
ON
IntelliMAXt FPF2595
Control Logic
ISET
Charge Pump
Thermal Shutdown
OC FLAGB
Figure 2. Functional Block Diagram
GND
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1
A
V IN
FPF2595
PIN CONFIGURATIONS
2
3
3
2
GND
VOUT
VOUT
GND
1
V IN
A
B
V IN
GND
VOUT
VOUT
GND
V IN
B
C
V IN
GND
VOUT
VOUT
GND
V IN
C
D
OCFLAGB
I SET
ON
ON
I SET
OCFLAGB D
Figure 3. Pin Assignments (Top View)
Figure 4. Pin Assignments (Bottom View)
PIN DESCRIPTION
Pin No.
Name
A3, B3, C3 A1, B1, C1 A2, B2, C2
VOUT VIN GND
D3
ON
D1
OCFLAGB
D2
ISET
Description
Switch Output
Supply Input: Input to the power switch
Ground (True device ground)
ON/OFF Control Input: Active HIGH − GPIO compatible
Logic HIGH
Switch Enable
Logic LOW
Switch Disable
Fault Output: Active LOW, open−drain output that indicates an input over current. External pull−up resistor to VCC is required.
Current Limit Set Input: A resistor from ISET to ground sets the current limit for the switch.
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FPF2595
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min
Max
Unit
VPIN
ISW tPD TJ TSTG QJA ESD
VOUT to GND, VOUT to VIN ON, VIN, FLAGB, ISET to GND Maximum Continuous Switch Current (Note 2)
Total Power Dissipation at TA = 25°C Operating Junction Temperature
Storage Junction Temperature
Thermal Resistance, Junction−to−Ambient (1−inch Square Pad of 2 oz. Copper)
Electrostatic Discharge Capability
Human Body Model, JESD22−A114
−0.3
28.0
V
−0.3
6.0
−
3.9
A
−
1.48
W
−40
+150
°C
−65
+150
°C
−
84.1 (Note 3) °C/W
2.0
−
kV
Charged Device Model, JESD22−C101
1.0
−
IEC61000−4−2 System Level
Air Discharge (VIN, VON, VOUT to GND)
15.0
−
Contact Discharge (VIN, VON, VOUT to GND)
8.0
−
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality.