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BSS138WQ Dataheets PDF



Part Number BSS138WQ
Manufacturers Diodes
Logo Diodes
Description 50V N-CHANNEL MOSFET
Datasheet BSS138WQ DatasheetBSS138WQ Datasheet (PDF)

BSS138WQ 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 0.28A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Motor Control  Power Management Functions Features and Benefits  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Totally Lead.

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BSS138WQ 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 0.28A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Motor Control  Power Management Functions Features and Benefits  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The BSS138WQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: SOT323  Case Material: Molded Plastic, "Green" Molding Compound, UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3  Terminal Connections: See Diagram  Weight: 0.006 grams (Approximate) D SOT323 D G Top View S Equivalent Circuit G S Top View Ordering Information (Note 4) Notes: Part Number BSS138WQ-7-F BSS138WQ-13-F Case SOT323 SOT323 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information K38 YM K38 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: I = 2021) M = Month (ex: 9 = September) Date Code Key Year Code 2021 I 2022 J Month Code Jan Feb 1 2 BSS138WQ Document number: DS42925 Rev. 2 - 2 2023 K Mar 3 2024 L Apr 4 2025 M 2026 N 2027 O May Jun Jul 5 6 7 1 of 7 www.diodes.com 2028 P Aug 8 2029 R Sep 9 2030 S Oct O 2031 T 2032 U Nov Dec N D August 2021 © Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State Maximum Body Diode Continuous Current Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) TA = +25°C TA = +70°C Symbol VDSS VGSS ID IS IDM Value 50 20 0.28 0.22 0.28 1 BSS138WQ Unit V V A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Symbol PD RJA PD RJA TJ, TSTG Value 0.4 279 0.5 226 -55 to +150 Unit W C/W W C/W C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge SWITCHING CHARACTERISTICS (Note 8) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Symbol Min BVDSS 50 IDSS  IGSS  VGS(TH) 0.5 RDS(ON)  VSD  Ciss  Coss  Crss  Rg  Qg  Qgs  Qgd  tD(ON)  tR  tD(OFF)  tF  tRR  QRR  Typ Max    1  100  1.5 1.2 3.5 0.8 1.2 48  10  6  37.5  1.5  0.2  0.3  3  9  43  14  17.6  9.5  Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. Unit Test Condition V VGS = 0V, ID = 250µA µA VDS = 50V, VGS = 0V nA VGS = 20V, VDS = 0V V VDS = VGS, ID = 250µA Ω VGS = 10V, ID = 0.22A V VGS = 0V, IS = 0.2A pF pF VDS = 25V, VGS = 0V, f = 1.0MHz pF Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC nC VGS = 10V ,VDS = 25V, ID = 0.2A nC ns ns VDD = 30V, ID = 0.2.


LM1973 BSS138WQ TLV431


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