Document
BSS138WQ
50V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 50V
RDS(ON) Max 3.5Ω @ VGS = 10V
ID Max TA = +25°C
0.28A
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
Motor Control Power Management Functions
Features and Benefits
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS138WQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound,
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate)
D
SOT323
D
G
Top View
S
Equivalent Circuit
G
S
Top View
Ordering Information (Note 4)
Notes:
Part Number BSS138WQ-7-F BSS138WQ-13-F
Case SOT323 SOT323
Packaging 3,000/Tape & Reel 10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
K38
YM
K38 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: I = 2021) M = Month (ex: 9 = September)
Date Code Key Year Code
2021 I
2022 J
Month Code
Jan
Feb
1
2
BSS138WQ
Document number: DS42925 Rev. 2 - 2
2023 K
Mar 3
2024 L
Apr 4
2025 M
2026 N
2027 O
May
Jun
Jul
5
6
7
1 of 7 www.diodes.com
2028 P
Aug 8
2029 R
Sep 9
2030 S
Oct O
2031 T
2032 U
Nov
Dec
N
D
August 2021
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady State
Maximum Body Diode Continuous Current
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
IS IDM
Value 50 20 0.28 0.22 0.28 1
BSS138WQ
Unit V V A A A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range
Symbol PD RJA PD RJA
TJ, TSTG
Value 0.4 279 0.5 226
-55 to +150
Unit W
C/W W
C/W C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge SWITCHING CHARACTERISTICS (Note 8) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge
Symbol Min
BVDSS 50
IDSS
IGSS
VGS(TH) 0.5
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Typ Max
1
100
1.5
1.2 3.5
0.8 1.2
48
10
6
37.5
1.5
0.2
0.3
3
9
43
14
17.6
9.5
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.
Unit
Test Condition
V VGS = 0V, ID = 250µA µA VDS = 50V, VGS = 0V nA VGS = 20V, VDS = 0V
V VDS = VGS, ID = 250µA Ω VGS = 10V, ID = 0.22A V VGS = 0V, IS = 0.2A
pF pF VDS = 25V, VGS = 0V, f = 1.0MHz pF Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC nC VGS = 10V ,VDS = 25V, ID = 0.2A nC
ns ns VDD = 30V, ID = 0.2.