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MJE5731A Dataheets PDF



Part Number MJE5731A
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High Voltage PNP Silicon Plastic Power Transistors
Datasheet MJE5731A DatasheetMJE5731A Datasheet (PDF)

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, switch−mode power supply drivers and other switching applications. Features • Popular TO−220 Plastic Package • PNP Complements to the TIP47 thru TIP50 Series • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage MJE5730 MJE5731 MJE5731A VCEO Vdc 300 350 375 Collector−Base Vo.

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MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, switch−mode power supply drivers and other switching applications. Features • Popular TO−220 Plastic Package • PNP Complements to the TIP47 thru TIP50 Series • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage MJE5730 MJE5731 MJE5731A VCEO Vdc 300 350 375 Collector−Base Voltage MJE5730 MJE5731 MJE5731A VCB Vdc 300 350 375 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25_C Derate above 25°C VEB 5.0 Vdc IC 1.0 Adc ICM 3.0 Adc IB 1.0 Adc PD 40 W 0.32 W/_C Total Device Dissipation @ TC = 25_C Derate above 25°C PD 2.0 W 0.016 W/_C Unclamped Inducting Load Energy E (See Figure 10) 20 mJ Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Symbol RqJC RqJA Max 3.125 62.5 Unit _C/W _C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 1 January, 2015 − Rev. 8 www.onsemi.com 1.0 AMPERE POWER TRANSISTORS PCP SILICON 300−350−400 VOLTS 50 WATTS COLLECTOR 2, 4 1 BASE 3 EMITTER 4 TO−220 CASE 221A−09 STYLE 1 1 23 MARKING DIAGRAM MJE573xG AY WW MJE573x = G = A = Y = WW = Device Code x = 0, 1, or 1A Pb−Free Package Assembly Location Year Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: MJE5730/D MJE5730, MJE5731, MJE5731A ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) MJE5730 MJE5731 MJE5731A VCEO(sus) Vdc 300 − 350 − 375 − Collector Cutoff Current (VCE = 200 Vdc, IB = 0) MJE5730 (VCE = 250 Vdc, IB = 0) MJE5731 (VCE = 300 Vdc, IB = 0) MJE5731A ICEO − − − mAdc 1.0 1.0 1.0 Collector Cutoff Current (VCE = 300 Vdc, VBE = 0) MJE5730 (VCE = 350 Vdc, VBE = 0) MJE5731 (VCE = 400 Vdc, VBE = 0) MJE5731A ICES − − − mAdc 1.0 1.0 1.0 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) IEBO − mAdc 1.0 DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc) DYNAMIC CHARACTERISTICS hFE 30 10 VCE(sat) − VBE(on) − − 150 − Vdc 1.0 Vdc 1.5 Current Gain − Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz) fT MHz 10 − Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe − 25 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. hFE, DC CURRENT GAIN VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 100 TJ = 150°C 50 25°C 30 - 55°C 20 10 VCE = 10 V 5.0 3.0 2.0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain 1.4 1.2 1 TJ = 25°C 0.8 0.6 - 55°C 0.4 150°C 0.2 VCE(sat)) @ IC/IB = 5.0 0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMPS) Figure 2. Collector−Emitter Saturation Voltage www.onsemi.com 2 V, VOLTAGE (V) IC, COLLECTOR CURRENT (AMP) MJE5730, MJE5731, MJE5731A 1.4 1.2 1.0 VBE(sat) @ IC/IB = 5.0 0.8 0.6 0.4 TJ = - 55°C 25°C 150°C 0.2 0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMPS) Figure 3. Base−Emitter Voltage DERATING FACTOR 1.0 SECOND BREAKDOWN 0.8 DERATING 0.6 THERMAL DERATING 0.4 0.2 0 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (°C) Figure 4. Normalized Power Derating 10 5.0 2.0 1.0 0.5 TC = 25°C 1.0 ms dc 100 ms 500 ms 0.2 0.1 0.05 0.02 0.01 5.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MJE5730 MJE5731 MJE5732 10 20 30 50 100 200 300 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating .


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