Document
MJE5730, MJE5731, MJE5731A
High Voltage PNP Silicon Plastic Power Transistors
These devices are designed for line operated audio output amplifier, switch−mode power supply drivers and other switching applications.
Features
• Popular TO−220 Plastic Package • PNP Complements to the TIP47 thru TIP50 Series • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage MJE5730 MJE5731 MJE5731A
VCEO
Vdc
300
350
375
Collector−Base Voltage MJE5730 MJE5731 MJE5731A
VCB
Vdc
300
350
375
Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation
@ TC = 25_C Derate above 25°C
VEB
5.0
Vdc
IC
1.0
Adc
ICM
3.0
Adc
IB
1.0
Adc
PD
40
W
0.32
W/_C
Total Device Dissipation @ TC = 25_C Derate above 25°C
PD
2.0
W
0.016
W/_C
Unclamped Inducting Load Energy
E
(See Figure 10)
20
mJ
Operating and Storage Junction Temperature Range
TJ, Tstg −65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristics
Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient
Symbol RqJC RqJA
Max 3.125 62.5
Unit _C/W _C/W
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 8
www.onsemi.com
1.0 AMPERE POWER TRANSISTORS
PCP SILICON 300−350−400 VOLTS
50 WATTS
COLLECTOR 2, 4
1 BASE
3 EMITTER
4
TO−220 CASE 221A−09
STYLE 1
1 23
MARKING DIAGRAM
MJE573xG AY WW
MJE573x =
G
=
A
=
Y
=
WW
=
Device Code x = 0, 1, or 1A Pb−Free Package Assembly Location Year Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
Publication Order Number: MJE5730/D
MJE5730, MJE5731, MJE5731A
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0) MJE5730
MJE5731
MJE5731A
VCEO(sus)
Vdc
300
−
350
−
375
−
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0) MJE5730
(VCE = 250 Vdc, IB = 0) MJE5731
(VCE = 300 Vdc, IB = 0) MJE5731A
ICEO − − −
mAdc 1.0 1.0 1.0
Collector Cutoff Current
(VCE = 300 Vdc, VBE = 0) MJE5730
(VCE = 350 Vdc, VBE = 0) MJE5731
(VCE = 400 Vdc, VBE = 0) MJE5731A
ICES − − −
mAdc 1.0 1.0 1.0
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
IEBO −
mAdc 1.0
DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc)
Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc)
Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
hFE 30 10
VCE(sat) −
VBE(on) −
− 150
−
Vdc 1.0
Vdc 1.5
Current Gain − Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz)
fT
MHz
10
−
Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
−
25
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
hFE, DC CURRENT GAIN VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
200
100 TJ = 150°C
50
25°C
30
- 55°C
20
10
VCE = 10 V
5.0
3.0
2.0
0.02 0.03 0.05 0.1
0.2 0.3 0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
1.4 1.2
1 TJ = 25°C
0.8
0.6
- 55°C
0.4
150°C
0.2 VCE(sat)) @ IC/IB = 5.0
0
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 2. Collector−Emitter Saturation Voltage
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V, VOLTAGE (V)
IC, COLLECTOR CURRENT (AMP)
MJE5730, MJE5731, MJE5731A
1.4 1.2
1.0 VBE(sat) @ IC/IB = 5.0
0.8
0.6
0.4
TJ = - 55°C
25°C 150°C
0.2
0
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMPS) Figure 3. Base−Emitter Voltage
DERATING FACTOR
1.0
SECOND BREAKDOWN
0.8
DERATING
0.6 THERMAL DERATING
0.4
0.2
0 0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C) Figure 4. Normalized Power Derating
10 5.0
2.0
1.0
0.5
TC = 25°C
1.0 ms dc
100 ms 500 ms
0.2
0.1 0.05
0.02 0.01
5.0
BONDING WIRE LIMIT THERMAL LIMIT
SECOND BREAKDOWN LIMIT MJE5730 MJE5731 MJE5732
10
20 30 50
100
200 300 500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating .