BUJD203AD
NPN power transistor with integrated diode
23 July 2018
Product data sheet
1. General description
High volta...
BUJD203AD
NPN power
transistor with integrated diode
23 July 2018
Product data sheet
1. General description
High voltage, high speed, planar passivated
NPN power switching
transistor with integrated antiparallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.
2. Features and benefits
Fast switching High voltage capability Integrated anti-parallel E-C diode Surface mountable package Very low switching and conduction losses
3. Applications
DC-to-DC converters Electronic lighting ballasts Inverters Motor control systems
4. Pinning information
Table 1. Pinning information
Pin
Symbol Description
Simplified outline
1
B
base
2
C
collector[1]
3
E
emitter
mb
C
mounting base; connected to collector
Graphic symbol
C
B
E sym131
DPAK (SOT428) [1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
WeEn Semiconductors
BUJD203AD
NPN power
transistor with integrated diode
5. Ordering information
Table 2. Ordering information
Type number
Package
Name
BUJD203AD
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
Version SOT428
BUJD203AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
23 July 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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WeEn Semiconductors
BUJD203AD
NPN power
transistor with integrated diode
6. Limiting values
Table 3. Limiting values In accordance with the Absolut...