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BUJD203AD

WeEn

NPN power transistor

BUJD203AD NPN power transistor with integrated diode 23 July 2018 Product data sheet 1. General description High volta...


WeEn

BUJD203AD

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Description
BUJD203AD NPN power transistor with integrated diode 23 July 2018 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor with integrated antiparallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode Surface mountable package Very low switching and conduction losses 3. Applications DC-to-DC converters Electronic lighting ballasts Inverters Motor control systems 4. Pinning information Table 1. Pinning information Pin Symbol Description Simplified outline 1 B base 2 C collector[1] 3 E emitter mb C mounting base; connected to collector Graphic symbol C B E sym131 DPAK (SOT428) [1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package WeEn Semiconductors BUJD203AD NPN power transistor with integrated diode 5. Ordering information Table 2. Ordering information Type number Package Name BUJD203AD DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 BUJD203AD Product data sheet All information provided in this document is subject to legal disclaimers. 23 July 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 WeEn Semiconductors BUJD203AD NPN power transistor with integrated diode 6. Limiting values Table 3. Limiting values In accordance with the Absolut...




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