WNSC2D201200W

WNSC2D201200W Silicon Carbide Diode Rev.01 - 12 November 2020 1. General description Silicon Carbide Schottky diode in a 2-lead TO247-2L plastic package, designed for high frequency switched-mode power supplies. RoHS Product data sheet halogen-Free 2. Features and benefits Extremely fast reverse recovery time Low figure of merit (QC*VF) Highly stable switching performance Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Applications Power factor correction Telecom / Server SMPS UPS PV inverter PC Silverbox LED / OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 108 °C; Fig. 1; Fig. 2; Fig. 3 Tj junction temperature Symbol Parameter Conditions Static characteristics VF forward voltage Dynamic characteristics IF = 20 A; Tj = 25 °C; Fig. 5 IF = 20 A; Tj = 150 °C; Fig. 5 IF = 20 A; Tj = 175 °C; Fig. 5 Qr recovered charge IF = 20 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; Fig. 7 Values Unit 1200 V 20 A 175 Min Typ °C Max Unit - 1.5 1.8 V - 2.1 2.5 V - 2.25 2.8 V - 39 - nC WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A mb mb anode mounting base; connected to ...