WB75FC65AL

WB75FC65AL Hyperfast power diode - Bare die Rev.01 - 08 September 2020 1. General description Hyperfast power diode (Bare die without sawn). 2. Features and benefits Low forward voltage drop Low leakage current Fast reverse recovery Bare die 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM* repetitive peak reverse voltage IF(AV)** average forward current δ = 0.5; square-wave pulse Static characteristics VF** forward voltage Dynamic characteristics IF = 75 A; Tj = 25 °C trr** reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs; Tj = 25 °C 4. Ordering information Table 2. Ordering information Type number Package Name WB75FC65AL Wafer Description Bare die on wafer Product data sheet Min Typ Max Unit - - 650 V - - 75 A - 2.2 2.75 V - - 50 ns Version Die WeEn Semiconductors WB75FC65AL Hyperfast power diode - Bare die 5. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM* repetitive peak reverse voltage VRWM* crest working reverse voltage VR* reverse voltage DC IF(AV)** average forward current δ = 0.5; square-wave pulse IFRM** repetitive peak forward δ = 0.5; tp = 25 μs; square-wave pulse current IFSM** non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse Tstg** storage temperature Tj** junction tempera...