WB25SC120AL

WB25SC120AL Silicon Carbide Schottky diode - Bare die Rev.01 - 26 October 2021 Product data sheet 1. General description Silicon Carbide Schottky diode (Bare Die). 2. Features and benefits Extremely fast reverse recovery time Low figure of merit (Qr*VF) Highly stable switching performance Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM* repetitive peak reverse voltage IF(AV)** average forward current δ = 0.5; square-wave pulse Static characteristics VF** forward voltage Dynamic characteristics IF = 25 A; Tj = 25 °C IF = 25 A; Tj = 150 °C Qr** recovered charge IF = 25 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C Min Typ Max Unit - - 1200 V - - 25 A - 1.42 1.65 V - 1.9 2.3 V - 54 - nC 4. Ordering information Table 2. Ordering information Type number Orderable part number WB25SC120AL WB25SC120ALZ Name Wafer Description Bare die on wafer Version Die WeEn Semiconductors WB25SC120AL Silicon Carbide Schottky diode - Bare Die 5. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM* repetitive peak reverse voltage VRWM* crest working reverse voltage VR* reverse voltage DC IF(AV)** IFRM** IFSM** Tstg** Tj** average forward current repetitive peak f...