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WND35P08X Dataheets PDF



Part Number WND35P08X
Manufacturers WeEn
Logo WeEn
Description Standard power diode
Datasheet WND35P08X DatasheetWND35P08X Datasheet (PDF)

WND35P08X Standard power diode Rev.02 - 20 April 2022 Product data sheet 1. General description Standard reverse recovery power diode in a TO220F package. RoHS halogen-Free 2. Features and benefits • Low forward voltage drop • Low leakage current • High voltage capability • High inrush current capability 3. Applications • Input rectifier • Bypass diode 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse.

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WND35P08X Standard power diode Rev.02 - 20 April 2022 Product data sheet 1. General description Standard reverse recovery power diode in a TO220F package. RoHS halogen-Free 2. Features and benefits • Low forward voltage drop • Low leakage current • High voltage capability • High inrush current capability 3. Applications • Input rectifier • Bypass diode 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; square-wave pulse; Fig. 1; Fig. 2 IFSM non-repetitive peak tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; forward current Fig. 3 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse Symbol Parameter Conditions Static characteristics VF forward voltage IF = 20 A; Tj = 25 °C; Fig. 5 IF = 20 A; Tj = 150 °C; Fig. 5 IF = 35 A; Tj = 25 °C; Fig. 5 IF = 35 A; Tj = 150 °C; Fig. 5 Values Unit 800 V 35 A 400 A 435 Min Typ A Max Unit - 1.05 1.25 V - 1.00 1.20 V - 1.18 1.40 V - 1.15 1.35 V WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A anode mb n.c. mounting base; isolated Simplified outline mb WND35P08X Standard power diode Graphic symbol K A 001aaa020 12 6. Ordering information Table 3. Ordering information Type number Package name WND35P08X TO220F-2L Orderable part number Packing method WND35P08XQ Tube Small packing Package quantity version 50 SOD113A Package issue date 10-April-2014 7. Marking Table 4. Marking codes Type number WND35P08X Marking codes WND35P08X WND35P08X Product data sheet All information provided in this document is subject to legal disclaimers. 20 April 2022 © WeEn Semiconductors Co., Ltd. 2022. All rights reserved 2 / 10 WeEn Semiconductors 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM repetitive peak reverse voltage VRWM crest working reverse voltage VR reverse voltage DC IF(AV) average forward current δ = 0.5 ; square-wave pulse; Fig. 1; Fig. 2 IFSM non-repetitive peak tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; forward current Fig. 3 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse I2t I2t for fusing sine-wave pulse; Tj(init) = 25 °C; tp = 10 ms Tstg storage temperature Tj junction temperature WND35P08X Standard power diode Values Unit 800 V 800 V 800 V 35 A 400 A 435 A 800 A2s -40 to 150 °C -40 to 150 °C Fig. 1. IF(AV) = IF(RMS) × √δ Vo = 1.025 V; Rs = 0.0092 Ω Forward power dissipation as a function of average forward current; square waveform; maximum values Fig. 2. a = form factor = IF(RMS) / IF(AV) Vo = 1.025 V; Rs = 0.0092 Ω Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values WND35P08X Product data sheet All information provided in this document is subject to legal disclaimers. 20 April 2022 © WeEn Semiconductors Co., Ltd. 2022. All rights reserved 3 / 10 WeEn Semiconductors WND35P08X Standard power diode IF IFSM tp t Tj(init)= 25 °Cmax Fig. 3. Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values WND35P08X Product data sheet All information provided in this document is subject to legal disclaimers. 20 April 2022 © WeEn Semiconductors Co., Ltd. 2022. All rights reserved 4 / 10 WeEn Semiconductors 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-h) thermal resistance from junction to heatsink Rth(j-a) thermal resistance from junction to ambient free air Conditions Fig. 4 in free air WND35P08X Standard power diode Min Typ Max Unit - - 3.2 K/W - 60 - K/W P tp δ= T tp t T Fig. 4. Transient thermal impedance from junction to heatsink as a function of pulse duration 10. Isolation characteristics Table 7. Isolation characteristics Symbol Parameter Visol(RMS) RMS isolation voltage Cisol isolation capacitance Conditions 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free from cathode to external heatsink Min Typ Max Unit - - 2500 V - 10 - PF WND35P08X Product data sheet All information provided in this document is subject to legal disclaimers. 20 April 2022 © WeEn Semiconductors Co., Ltd. 2022. All rights reserved 5 / 10 WeEn Semiconductors 11. Characteristics Table 8. Characteristics Symbol Parameter Static characteristics VF forward current IR reverse current Conditions IF = 20 A; Tj = 25 °C; Fig. 5 IF = 20 A; Tj = 150 °C; Fig. 5 IF = 35 A; Tj = 25 °C; Fig. 5 IF = 35 A; Tj = 150 °C; Fig. 5 VR = 1600 V; Tj = 25 °C VR = 1600 V; Tj = 150 °C WND35P08X Standard power diode Min Typ Max Unit - 1.05 1.25 V - 1.00 1.20 V - 1.18 1.40 V - 1.15 1.35 V - - 50 μA - - 1 m.


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