WNSC2D04650D

WNSC2D04650D Silicon Carbide Diode Rev.01 - 21 January 2021 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high frequency switched-mode power supplies. h RoHS alogen-Free Lead-Free 2. Features and benefits Highly stable switching performance Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Applications Power factor correction Telecom / Server SMPS UPS PV inverter PC Silverbox LED / OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM IF(AV) Tj Symbol repetitive peak reverse voltage average forward current junction temperature δ = 0.5 ; square-wave pulse; Tmb ≤ 137 °C; Fig. 1; Fig. 2; Fig. 3 Parameter Conditions Static characteristics VF forward voltage IF = 4 A; Tj = 25 °C; Fig. 5 IF = 4 A; Tj = 150 °C; Fig. 5 Dynamic characteristics Qr recovered charge IF = 4 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; Fig. 7 Values Unit 650 V 4 A 175 Min Typ °C Max Unit - 1.5 1.7 V - 1.8 2.2 V - 6.5 - nC WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 n.c. not connected 2 K 3 A mb K cathode [1] anode mounting base; connected to cathode Simplified outline WNSC2D04650D Silicon...