DMN2710UFB

ADVANCED INFORMATION DMN2710UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 0.45Ω @ VGS = 4.5V 0.6Ω @ VGS = 2.5V ID TA = +25°C 1.3A 1.2A Features and Benefits  Footprint of Just 0.6mm2—13 Times Smaller Than SOT23  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.  Portable Electronics Mechanical Data  Case: X1-DFN1006-3  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish—NiPdAu Over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Weight: 0.001 grams (Approximate) D ESD PROTECTED X1-DFN1006-3 Bottom View S D G Top View Internal Schematic G Gate Protection Diode S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN2710UFB-7 DMN2710UFB-7B Case X1-DFN1006-3 X1-DF...