IMW65R107M1H

IMW65R107M1H MOSFET 650VCoolSiCªM1SiCTrenchPowerDevice The650VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology developedinInfineoninmorethan20years.Leveragingthewidebandgap SiCmaterialcharacteristics,the650VCoolSiC™MOSFEToffersaunique combinationofperformance,reliabilityandeaseofuse.Suitableforhigh temperatureandharshoperations,itenablesthesimplifiedandcost effectivedeploymentofthehighestsystemefficiency. Features Optimizedswitchingbehaviorathighercurrents CommutationrobustfastbodydiodewithlowQrr Superiorgateoxidereliability Bestthermalconductivityandbehavior LowerRDS(on)andpulsecurrentdependencyontemperature Increasedavalanchecapability Compatiblewithstandarddrivers(recommendeddrivingvoltage:18V) Benefits Uniquecombinationofhighperformance,highreliabilityandeaseofuse Easeofuseandintegration Suitablefortopologieswithcontinuoushardcommutation Higherrobustnessandsystemreliability Efficiencyimprovement Reducedsystemsizeleadingtohigherpowerdensity Potentialapplications SMPS UPS(uninterruptablepowersupplies) SolarPVinverters EVcharginginfrastructure Energystorageandbatteryformation ClassDamplifiers Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS@TJ=25°C 650 V RDS(on),typ 107 mΩ QG,typ ...