IXBF55N300

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = IC110 = VCE(sat)  3000V 34A 3.2V (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 25 V ± 35 V IC25 TC = 25°C 86 A IC110 TC = 110°C 34 A ICM TC = 25°C, 1ms 600 A SSOA VGE = 15V, TVJ = 125°C, RG = 2 ICM = 110 A (RBSOA) Clamped Inductive Load 1500 V TSC VGE = 15V, TJ = 125°C, (SCSOA) RG = 10, VCE = 1250V, Non-Repetitive 10 µs PC TC = 25°C 357 W TJ -55 ... +150 °C TJM 150 °C T -55 ... +150 °C stg TL Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062 in.) from Case for 10s FC VISOL Weight Mounting Force 50/60Hz, 1 Minute 20..120 / 4.5..27 N/lb 4000 V~ 5 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 4mA, VCE = VGE ICES VCE = VCES, VGE = 0V Note 2, TJ = 125°C I V = 0V, V = ± 25V GES CE GE VCE(sat) IC = 55A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 3000 V 3.0 5.0 V 50 µA 3 mA ±200 nA 2.7 3.2 V 3.3 V ISOPLUS i4-PakTM 12 5 Isolated Tab 1 = Gate 2 = Emitter 5 = Collector Features  Silicon Chip on Direct-Copper Bond (DCB) Substrate  Isolated Mounting Surface  4000V~ Electrical Isolation  High Blocking Voltage  High Peak Current Capability  Low Saturation Voltage Advantages  Low Gate...