IRF6898M

IRF6898MPbF IRF6898MTRPbF HEXFET® Power MOSFET plus Schottky Diode RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible  25V min ±16V max 0.8m@ 10V 1.2m@ 4.5V Low Package Inductance Optimized for High Frequency Switching Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for CPU Core DC-DC Converters 45nC 15nC 5.5nC 75nC 48nC 1.6V Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested S Footprint compatible to DirectFET DG D S Applicable DirectFET™ Outline and Substrate Outline (see p.7,8 for details)  DirectFET™ ISOMETRIC MX SQ SX ST MQ MX MT MP Description The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best th...