IMZ120R030M1H

IMZ120R030M1H IMZ120R030M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state characteristic  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage for easy and simple gate drive  Fully controllable dV/dt  Robust body diode for hard commutation  Temperature independent turn-off switching losses  Sense pin for optimized switching performance Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 Benefits  Efficiency improvement  Enabling higher frequency  Increased power density  Cooling effort reduction  Reduction of system complexity and cost Potential applications  Energy generation o Solar string inverter and solar optimizer  Industrial power supplies o Industrial UPS o Industrial SMPS  Infrastructure – Charge o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Table 1 Key Performance and Package Parameters Type VDS IMZ120R030M1H 1200V ID TC = 25°C, Rth(j-c,max) 56A RDS(on) Tvj = 25°C, ID = 25A, VGS = 18V 30mΩ Tvj,max 175°C Marking 12M1H030 Package PG-TO247-4 Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com page 1 of 17 2.2 2020-12-11 IMZ120R030M1H CoolSiC™ 1200V SiC Trench MOSFET Table of contents T12a0b0lVe SoifCcTornentechnMtsOSFET Features...