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VS-12F80 Dataheets PDF



Part Number VS-12F80
Manufacturers Vishay
Logo Vishay
Description Standard Recovery Diodes
Datasheet VS-12F80 DatasheetVS-12F80 Datasheet (PDF)

www.vishay.com VS-12F(R) Series Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 12 A DO-4 (DO-203AA) PRIMARY CHARACTERISTICS IF(AV) Package 12 A DO-4 (DO-203AA) Circuit configuration Single FEATURES • High surge current capability • Stud cathode and stud anode version • Wide current range • Types up to 1200 V VRRM • Designed and qualified for industrial and consumer level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL.

  VS-12F80   VS-12F80



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www.vishay.com VS-12F(R) Series Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 12 A DO-4 (DO-203AA) PRIMARY CHARACTERISTICS IF(AV) Package 12 A DO-4 (DO-203AA) Circuit configuration Single FEATURES • High surge current capability • Stud cathode and stud anode version • Wide current range • Types up to 1200 V VRRM • Designed and qualified for industrial and consumer level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • Battery charges • Converters • Power supplies • Machine tool controls MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) IF(RMS) IFSM I2t VRRM TJ TC 50 Hz 60 Hz 50 Hz 60 Hz Range VALUES 12 144 19 265 280 351 320 100 to 1200 -65 to +175 UNITS A °C A A A2s V °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 10 20 40 VS-12F(R) 60 80 100 120 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 100 200 400 600 800 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 150 275 500 725 950 1200 1400 IRRM MAXIMUM AT TJ = 175 °C mA 12 Revision: 11-Jan-18 1 Document Number: 93487 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-12F(R) Series Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at case temperature IF(AV) Maximum RMS forward current IF(RMS) Maximum peak, one-cycle forward, non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward  slope resistance High level value of forward  slope resistance Maximum forward voltage drop I2t VF(TO)1 VF(TO)2 rf1 rf2 VFM TEST CONDITIONS 180° conduction, half sine wave t = 10 ms t = 8.3 ms No voltage reapplied t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum t = 10 ms t = 8.3 ms 100 % VRRM reapplied t = 0.1 to 10 ms, no voltage reapplied (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum (I >  x IF(AV)), TJ = TJ maximum (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum (I >  x IF(AV)), TJ = TJ maximum Ipk = 38 A, TJ = 25 °C, tp = 400 μs rectangular wave VALUES 12 144 19 265 280 225 235 351 320 250 226 3510 0.77 0.97 10.70 6.20 1.26 UNITS A °C A A A2s A2s V m V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink TJ TStg RthJC RthCS Allowable mounting torque DC operation Mounting surface, smoo.


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