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VS-12F(R) Series
Vishay Semiconductors
Standard Recovery Diodes, (Stud Version), 12 A
DO-4 (DO-203AA)
PRIMARY CHARACTERISTICS
IF(AV) Package
12 A DO-4 (DO-203AA)
Circuit configuration
Single
FEATURES • High surge current capability • Stud cathode and stud anode version • Wide current range • Types up to 1200 V VRRM • Designed and qualified for industrial and consumer level • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS • Battery charges • Converters • Power supplies • Machine tool controls
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV) IF(RMS) IFSM
I2t VRRM TJ
TC
50 Hz 60 Hz 50 Hz 60 Hz Range
VALUES 12 144 19 265 280 351 320
100 to 1200 -65 to +175
UNITS A °C A
A
A2s
V °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE CODE
10
20
40
VS-12F(R)
60
80
100
120
VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
V
100
200
400
600
800
1000
1200
VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE
V
150
275
500
725
950
1200
1400
IRRM MAXIMUM AT TJ = 175 °C
mA
12
Revision: 11-Jan-18
1
Document Number: 93487
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-12F(R) Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current at case temperature
IF(AV)
Maximum RMS forward current
IF(RMS)
Maximum peak, one-cycle forward, non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance
Maximum forward voltage drop
I2t VF(TO)1 VF(TO)2
rf1
rf2 VFM
TEST CONDITIONS 180° conduction, half sine wave
t = 10 ms t = 8.3 ms
No voltage reapplied
t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
100 % VRRM reapplied
No voltage reapplied
Sinusoidal half wave, initial TJ = TJ maximum
t = 10 ms t = 8.3 ms
100 % VRRM reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum Ipk = 38 A, TJ = 25 °C, tp = 400 μs rectangular wave
VALUES 12 144 19 265 280 225 235 351 320 250 226
3510 0.77 0.97
10.70
6.20
1.26
UNITS A °C A
A
A2s
A2s V
m V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink
TJ TStg RthJC RthCS
Allowable mounting torque
DC operation Mounting surface, smoo.