LDAN202KLT1G

LESHAN RADIO COMPANY, LTD. Dual Serise Switching Diodes FEATURES Ultra high speed switching Suitable for high packing density layout. High reliability. We declare that the material of product is ROHS compliant. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device LDAN202KLT1G S-LDAN202KLT1G LDAN202KLT3G S- LDAN202KLT3G Marking N N Shipping 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS (Each Diode) Rating Symbol Reverse Voltag Forward Current Peak Forward Surge Current Forward voltage(If = 100mA ) Reverse current (Vr = 70V ) VR Io IFM(surge) VF IR Capacitance between terminals(f =1MHz) CT Reverse recovery time(Vr= 6V,If=5 mA) Trr Value 80 100 300 1.2 0.1 3.5 4 Unit Vdc mAdc mAdc V uA pF nS LDAN202KLT1G S-LDAN202KLT1G 3 1 2 SOT –23 ANODE 1 ANODE 2 3 CATHODE POWER DISSIPATION : Pd / Pd Max.(%) FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (nA) ELECTRICAL CHARACTERISTIC CURVES 125 50 100 75 50 25 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE :Ta (ºC) Fig.1 Power attenuation curve 20 10 5 Ta=85ºC 2 50ºC 25ºC 1 0ºC 0.5 −30ºC 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE : VF (V) Fig.2 Forward characteristics 1000 100 10 1 0.1 Ta=100°C 75°C 50°C 25°C 0°C −25°C 0.010 10 20 30 40 50 60 70 80 REVERSE VOLTAGE : VR (V) Fig.3 Reverse characteristics Rev.A 1/3 CAPACITANCE BETWEEN TERMINALS : CT...