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L2SC3838NLT1G Datasheet, Equivalent, High-Frequency Amplifier.High-Frequency Amplifier High-Frequency Amplifier |
　
　
　
| Part | L2SC3838NLT1G |
|---|---|
| Description | High-Frequency Amplifier |
| Feature | LESHAN RADIO COMPANY, LTD. High-Frequen cy Amplifier Transistor z Features 1. H igh transition frequency. (Typ. fT=3. 2GHz ) 2. Small rbb`Cc and high gain. (Typ. 4ps ) 3. Small NF. 4. We declare that the mat erial of product compliance with RoHS r equirements. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Vol tage VCBO 20 V Collector-Emitter Vo ltage VCEO 11 V Emitter-base voltag e VEBO 3 V Collector Current IC 5 0 mA Collector power dissipation PC 0. 2 W Junction temperature Tj 150 °C Storage temperature Tstg -55~+1 50 °C DEVICE M . |
| Manufacture | LRC |
| Datasheet |
| Part | L2SC3838NLT1G |
|---|---|
| Description | High-Frequency Amplifier |
| Feature | LESHAN RADIO COMPANY, LTD. High-Frequen cy Amplifier Transistor z Features 1. H igh transition frequency. (Typ. fT=3. 2GHz ) 2. Small rbb`Cc and high gain. (Typ. 4ps ) 3. Small NF. 4. We declare that the mat erial of product compliance with RoHS r equirements. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Vol tage VCBO 20 V Collector-Emitter Vo ltage VCEO 11 V Emitter-base voltag e VEBO 3 V Collector Current IC 5 0 mA Collector power dissipation PC 0. 2 W Junction temperature Tj 150 °C Storage temperature Tstg -55~+1 50 °C DEVICE M . |
| Manufacture | LRC |
| Datasheet |
　
　
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