LBAS20HT1G

LBAS20HT1G S-LBAS20HT1G High Voltage Switching Diode 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR 10000/Tape&Reel SOD323(SC-76) 1 CATHODE 2 ANODE 3. MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Limits Unit Continuous Reverse Voltage VR 200 V Peak Forward Current IF 200 mA Peak Forward Surge Current IFM(surge) 625 mA 4.THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board(Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 1.FR–5 Minimum Pad Symbol PD RθJA TJ,Tstg Limits Unit 200 mW 1.57 635 -55~+150 mW/℃ ℃/W ℃ 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Min. Typ. Max. Unit Reverse Voltage Leakage Current µA (VR = 200 V) IR - - 1 (VR = 200 V, TJ = 150°C) - - 100 Reverse Breakdown Voltage (IBR = 100 µA) V V(BR) 200 - - Forward voltage mV (IF =100mA) VF - - 1000 (IF =200mA) - - 1250 Diode Capacitance (VR = 0, f = 1.0 MHz) pF CD - - 5 Reverse Recovery Time (IF = IR = 30 mA, RL = 100 Ω) ns trr - - 50 Leshan Radio Company, LTD. Rev.A Jan. 2018 1/3 IF,Forward Current(A) IR,Reverse Current...