Document
MUR105SH – MUR160SH
Taiwan Semiconductor
1A, 50V - 600V Ultra Fast Surface Mount Rectifier
FEATURES
● AEC-Q101 qualified ● Glass passivated chip junction ● Ideal for automated placement ● Ultra Fast recovery time for high efficiency ● Low forward voltage, low power loss ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC to DC converter ● Automotive application ● Car lighting ● Snubber ● Freewheeling application
KEY PARAMETERS
PARAMETER VALUE UNIT
IF VRRM
1
A
50 - 600
V
IFSM TJ MAX Package
40, 35
A
175
°C
DO-214AA (SMB)
Configuration
Single die
MECHANICAL DATA
● Case: DO-214AA (SMB) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.090g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
MUR MUR MUR MUR MUR MUR
PARAMETER
SYMBOL 105S 110S 115S 120S 140S 160S UNIT
H
H
H
H
H
H
Marking code on the device
MUR MUR MUR MUR MUR MUR 105S 110S 115S 120S 140S 160S
Repetitive peak reverse voltage
VRRM
50 100 150 200 400 600 V
Reverse voltage, total rms value
VR(RMS)
35 70 105 140 280 420 V
Forward current
IF
Surge peak forward current, 8.3ms
single half sine-wave superimposed
IFSM
on rated load
1 40
A
35
A
Junction temperature
TJ
- 55 to +175
°C
Storage temperature
TSTG
- 55 to +175
°C
1
Version: A2102
MUR105SH – MUR160SH
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER Junction-to-lead thermal resistance
SYMBOL RӨJL
TYP 17
UNIT °C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS SYMBOL
MUR105SH MUR110SH MUR115SH MUR120SH
IF = 1A, TJ = 25°C
Forward voltage(1)
MUR140SH MUR160SH
VF
MUR105SH
MUR110SH MUR115SH MUR120SH IF = 1A, TJ = 150°C
MUR140SH MUR160SH
MUR105SH MUR110SH MUR115SH MUR120SH
TJ = 25°C
MUR140SH
Reverse current
MUR160SH
@ rated VR(2)
IR
MUR105SH
MUR110SH
MUR115SH MUR120SH TJ = 150°C
MUR140SH MUR160SH
Reverse recovery time
MUR105SH
MUR110SH
MUR115SH IF = 0.5A, IR = 1.0A MUR120SH
Irr = 0.25A
trr
MUR140SH MUR160SH
Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms
TYP -
MAX 0.875 1.250 0.710 1.050
2 5 50 150 25 50
UNIT V V V V V V V V V V V V µA µA µA µA µA µA µA µA µA µA µA µA ns ns ns ns ns ns
2
Version: A2102
MUR105SH – MUR160SH
Taiwan Semiconductor
ORDERING INFORMATION
ORDERING CODE(1)
PACKAGE
MUR1xSH
DO-214AA (SMB)
Notes: 1. "x" defines voltage from 50V(MUR105SH) to 600V(MUR160SH)
PACKING 3,000 / Tape & Reel
3
Version: A2102
MUR105SH – MUR160SH
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
AVERAGE FORWARD CURRENT (A)
1.5
1
0.5
0 0
70
60
CAPACITANCE (pF)
50
40
30
20
10
0
25 50 75 100 125 150 175
0
LEAD TEMPERATURE (°C)
MUR105SH-120SH
MUR140SH-160SH
4
8
12
16
20
24
REVERSE VOLTAGE (V)
INSTANTANEOUS REVERSE CURRENT (μA)
Fig.3 Typical Reverse Characteristics
100
MUR105SH-120SH
10
TJ=150°C
Fig.4 Typical Reverse Characteristics
100 MUR140SH-160SH
10
TJ=150°C
1
1
0.1 0.01
TJ=25°C
0.1 0.01
TJ=25°C
0.001
0.001
0.0001 10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.0001 10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT (μA)
4
Version: A2102
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Typical Forward Characteristics
10 MUR105SH-120SH
MUR105SH – MUR160SH
Taiwan Semiconductor
Fig.6 Typical Forward Characteristics
10 MUR140SH-160SH
INS ITANSNTANTEAONUESOFUOSRFWOARRWDACRUDRCRUERNRTE(AN)T (A)
INSTANTANEOUS FORWARD CURRENT (A)
TJ=150°C 1
TJ=25°C
TJ=150°C 1
TJ=25°C
PEAK FORWARD SURGE CURRENT (A)
0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
FORWARD VOLTAGE (V)
0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
FORWARD VOLTAGE (V)
Fig.7 Maximum Non-repetitive Forward Surge Current
50 40 30 20 10
0 1
10
100
NUMBER OF CYCLES AT 60 Hz
5
Version: A2102
PACKAGE OUTLINE DIMENSIONS
DO-214AA (SMB)
MUR105SH – MUR160SH
Taiwan Semiconductor
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N = Marking Code
G
= Green Compound
YW = Date Code
F
= Factory Code
6
Version: A2102
MUR105SH – MUR160SH
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products.
Information contained herein is intended to provide a product description only. No license, exp.