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MUR115SH Dataheets PDF



Part Number MUR115SH
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Ultra Fast Surface Mount Rectifier
Datasheet MUR115SH DatasheetMUR115SH Datasheet (PDF)

MUR105SH – MUR160SH Taiwan Semiconductor 1A, 50V - 600V Ultra Fast Surface Mount Rectifier FEATURES ● AEC-Q101 qualified ● Glass passivated chip junction ● Ideal for automated placement ● Ultra Fast recovery time for high efficiency ● Low forward voltage, low power loss ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Automotive application ● Car lighting ● Snubber ● Freewheeling application KE.

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MUR105SH – MUR160SH Taiwan Semiconductor 1A, 50V - 600V Ultra Fast Surface Mount Rectifier FEATURES ● AEC-Q101 qualified ● Glass passivated chip junction ● Ideal for automated placement ● Ultra Fast recovery time for high efficiency ● Low forward voltage, low power loss ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Automotive application ● Car lighting ● Snubber ● Freewheeling application KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 1 A 50 - 600 V IFSM TJ MAX Package 40, 35 A 175 °C DO-214AA (SMB) Configuration Single die MECHANICAL DATA ● Case: DO-214AA (SMB) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.090g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MUR MUR MUR MUR MUR MUR PARAMETER SYMBOL 105S 110S 115S 120S 140S 160S UNIT H H H H H H Marking code on the device MUR MUR MUR MUR MUR MUR 105S 110S 115S 120S 140S 160S Repetitive peak reverse voltage VRRM 50 100 150 200 400 600 V Reverse voltage, total rms value VR(RMS) 35 70 105 140 280 420 V Forward current IF Surge peak forward current, 8.3ms single half sine-wave superimposed IFSM on rated load 1 40 A 35 A Junction temperature TJ - 55 to +175 °C Storage temperature TSTG - 55 to +175 °C 1 Version: A2102 MUR105SH – MUR160SH Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-lead thermal resistance SYMBOL RӨJL TYP 17 UNIT °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MUR105SH MUR110SH MUR115SH MUR120SH IF = 1A, TJ = 25°C Forward voltage(1) MUR140SH MUR160SH VF MUR105SH MUR110SH MUR115SH MUR120SH IF = 1A, TJ = 150°C MUR140SH MUR160SH MUR105SH MUR110SH MUR115SH MUR120SH TJ = 25°C MUR140SH Reverse current MUR160SH @ rated VR(2) IR MUR105SH MUR110SH MUR115SH MUR120SH TJ = 150°C MUR140SH MUR160SH Reverse recovery time MUR105SH MUR110SH MUR115SH IF = 0.5A, IR = 1.0A MUR120SH Irr = 0.25A trr MUR140SH MUR160SH Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms TYP - MAX 0.875 1.250 0.710 1.050 2 5 50 150 25 50 UNIT V V V V V V V V V V V V µA µA µA µA µA µA µA µA µA µA µA µA ns ns ns ns ns ns 2 Version: A2102 MUR105SH – MUR160SH Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1) PACKAGE MUR1xSH DO-214AA (SMB) Notes: 1. "x" defines voltage from 50V(MUR105SH) to 600V(MUR160SH) PACKING 3,000 / Tape & Reel 3 Version: A2102 MUR105SH – MUR160SH Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance AVERAGE FORWARD CURRENT (A) 1.5 1 0.5 0 0 70 60 CAPACITANCE (pF) 50 40 30 20 10 0 25 50 75 100 125 150 175 0 LEAD TEMPERATURE (°C) MUR105SH-120SH MUR140SH-160SH 4 8 12 16 20 24 REVERSE VOLTAGE (V) INSTANTANEOUS REVERSE CURRENT (μA) Fig.3 Typical Reverse Characteristics 100 MUR105SH-120SH 10 TJ=150°C Fig.4 Typical Reverse Characteristics 100 MUR140SH-160SH 10 TJ=150°C 1 1 0.1 0.01 TJ=25°C 0.1 0.01 TJ=25°C 0.001 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.0001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS REVERSE CURRENT (μA) 4 Version: A2102 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Typical Forward Characteristics 10 MUR105SH-120SH MUR105SH – MUR160SH Taiwan Semiconductor Fig.6 Typical Forward Characteristics 10 MUR140SH-160SH INS ITANSNTANTEAONUESOFUOSRFWOARRWDACRUDRCRUERNRTE(AN)T (A) INSTANTANEOUS FORWARD CURRENT (A) TJ=150°C 1 TJ=25°C TJ=150°C 1 TJ=25°C PEAK FORWARD SURGE CURRENT (A) 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 FORWARD VOLTAGE (V) 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 FORWARD VOLTAGE (V) Fig.7 Maximum Non-repetitive Forward Surge Current 50 40 30 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 5 Version: A2102 PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) MUR105SH – MUR160SH Taiwan Semiconductor SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code 6 Version: A2102 MUR105SH – MUR160SH Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, exp.


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