HS1MFSH

HS1DFSH – HS1MFSH Taiwan Semiconductor 1A, 200V - 1000V High Efficient Surface Mount Rectifier FEATURES ● AEC-Q101 qualified ● Glass passivated chip junction ● Ideal for automated placement ● Low power loss, high efficiency ● Fast switching for high efficiency ● Low profile package ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 KEY PARAMETERS PARAMETER VALUE UNIT IF 1 A VRRM 200 - 1000 V IFSM 35 A TJ MAX 150 °C Package SOD-128 Configuration Single die APPLICATIONS ● Freewheeling ● Snubber ● DC/DC converters ● Automotive application MECHANICAL DATA ● Case: SOD-128 ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.028g (approximately) SOD-128 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER HS1D SYMBOL FSH HS1G FSH HS1J FSH Marking code on the device HS1DFH HS1GFH HS1JFH Repetitive peak reverse voltage Reverse voltage, total rms value Forward current VRRM 200 400 600 VR(RMS) 140 280 420 IF 1 HS1K FSH HS1KFH 800 560 HS1M FSH HS1MFH 1000 700 UNIT V V A Surge peak forward current, t = 8.3ms single half sine-wave IFSM superimposed on rated load t = 1.0ms 35 A 90 A Junction temperature Storage temperature TJ TSTG -55 to +150 °C -55 to +150 °C 1 Version: B2103 HS1DFSH – HS1MFSH Taiwan Semic...