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FQPF3N50C Datasheet, Equivalent, N-Channel MOSFET.500V N-Channel MOSFET 500V N-Channel MOSFET |
| Part | FQPF3N50C |
|---|---|
| Description | 500V N-Channel MOSFET |
| Feature | FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
QFET®
FQP3N50C/FQPF3N50C
500V N-Cha nnel MOSFET
Features
• 3 A, 500 V, RD S(on) = 2. 5 Ω @ VGS = 10 V • Low ga te charge ( typical 10 nC ) • Low Crs s ( typical 8. 5 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability Description These N- Channel enhancement mode power field ef fect transistors are produced using ON Semiconductor’s proprietary, planar s tripe, DMOS technology. This advanced t echnology has been especially tailored to minimize on-state resistance, provid e superior switching performance, and w ithstand high energy pulse in t . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FQPF3N50C |
|---|---|
| Description | 500V N-Channel MOSFET |
| Feature | FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
QFET®
FQP3N50C/FQPF3N50C
500V N-Cha nnel MOSFET
Features
• 3 A, 500 V, RD S(on) = 2. 5 Ω @ VGS = 10 V • Low ga te charge ( typical 10 nC ) • Low Crs s ( typical 8. 5 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability Description These N- Channel enhancement mode power field ef fect transistors are produced using ON Semiconductor’s proprietary, planar s tripe, DMOS technology. This advanced t echnology has been especially tailored to minimize on-state resistance, provid e superior switching performance, and w ithstand high energy pulse in t . |
| Manufacture | ON Semiconductor |
| Datasheet |
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