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IRFW630B Dataheets PDF



Part Number IRFW630B
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet IRFW630B DatasheetIRFW630B Datasheet (PDF)

IRFW630B — N-Channel MOSFET IRFW630B N-Channel MOSFET 200 V, 9 A, 400 mΩ Features Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductors proprietary, planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC .

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IRFW630B — N-Channel MOSFET IRFW630B N-Channel MOSFET 200 V, 9 A, 400 mΩ Features Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductors proprietary, planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. • 9.0 A, 200 V, RDS(on) = 400 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 22 nC) • Low Crss (Typ. 22 pF) • 100% Avalanche Tested D D G S D2-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM VGSS EAS IAR EAR dv/dt Drain Current - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt PD Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds S (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) IRFW630BTM_FP001 200 9.0 5.7 36 ± 30 160 9.0 7.2 5.5 3.13 72 0.57 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W W/°C °C °C Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction to Case, Max. RJA Thermal Resistance, Junction to Ambient (Min. Pad of 2-oz Copper), Max. Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. IRFW630BTM_FP001 1.74 62.5 40 Unit oC/W ©2002 Semiconductor Components Industries, LLC. September-2017,Rev.3 Publication Order Number: IRFW630BTM-FP001/D IRFW630B — N-Channel MOSFET Package Marking and Ordering Information Device Marking IRFW630B Device IRFW630BTM-FP001 Package D2-PAK Reel Size 330 mm Tape Width 24 mm Quantity 800 units Electrical Characteristics TC = 25°C unless otherwise noted. Symbol Parameter Conditions Min Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 200 ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V -- VDS = 160 V, TC = 125°C -- IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA 2.0 VGS = 10 V, ID = 4.5 A -- gFS Forward Transconductance VDS = 40 V, ID = 4.5 A -- Dynamic Characteristics Ciss Coss Input Capacitance Output Capacitance VDS = 25 V, VGS = 0 V, -- f = 1.0 MHz -- Crss Reverse Transfer Capaci.


FQPF3N50C IRFW630B MMBFJ110


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