Document
IRFW630B — N-Channel MOSFET
IRFW630B
N-Channel MOSFET
200 V, 9 A, 400 mΩ
Features
Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductors proprietary, planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
• 9.0 A, 200 V, RDS(on) = 400 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
• Low Gate Charge (Typ. 22 nC) • Low Crss (Typ. 22 pF) • 100% Avalanche Tested
D
D
G S
D2-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS ID
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
IDM VGSS EAS IAR EAR dv/dt
Drain Current
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
PD
Power Dissipation (TA = 25°C)*
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
S
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
IRFW630BTM_FP001 200 9.0 5.7 36 ± 30 160 9.0 7.2 5.5 3.13 72 0.57
-55 to +150
300
Unit V A A A V mJ A mJ
V/ns W W
W/°C °C
°C
Thermal Characteristics
Symbol
Parameter
RJC Thermal Resistance, Junction to Case, Max.
RJA
Thermal Resistance, Junction to Ambient (Min. Pad of 2-oz Copper), Max. Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
IRFW630BTM_FP001 1.74 62.5 40
Unit oC/W
©2002 Semiconductor Components Industries, LLC. September-2017,Rev.3
Publication Order Number: IRFW630BTM-FP001/D
IRFW630B — N-Channel MOSFET
Package Marking and Ordering Information
Device Marking IRFW630B
Device IRFW630BTM-FP001
Package D2-PAK
Reel Size 330 mm
Tape Width 24 mm
Quantity 800 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
200
∆BVDSS / ∆TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
--
VDS = 160 V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS = VGS, ID = 250 µA
2.0
VGS = 10 V, ID = 4.5 A
--
gFS
Forward Transconductance
VDS = 40 V, ID = 4.5 A
--
Dynamic Characteristics
Ciss Coss
Input Capacitance Output Capacitance
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
Crss
Reverse Transfer Capaci.