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MMBFJ110 Datasheet, Equivalent, N-Channel JFET.N-Channel JFET N-Channel JFET |
　
　
　
| Part | MMBFJ110 |
|---|---|
| Description | N-Channel JFET |
| Feature | N-Channel JFET
MMBFJ110
Features
• T his Device is Designed for Digital Swit ching Applications where Very Low On Re sistance is Mandatory • Sourced from Process 58 • This is a Pb−Free Devi ce MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Notes 1, 2) Symb ol Parameter Value Unit VDG Drain∠’Gate Voltage 25 V VGS Gate−Source Voltage −25 V IGF Forward Gate Cu rrent 10 mA TJ Junction Temperature 150 °C TJ, TSTG Storage Temperatur e Range −55 to 150 °C Stresses exc eeding those listed in the Maximum Rati ngs table may damage the device. If any of these limits are exceeded, de . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | MMBFJ110 |
|---|---|
| Description | N-Channel JFET |
| Feature | N-Channel JFET
MMBFJ110
Features
• T his Device is Designed for Digital Swit ching Applications where Very Low On Re sistance is Mandatory • Sourced from Process 58 • This is a Pb−Free Devi ce MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Notes 1, 2) Symb ol Parameter Value Unit VDG Drain∠’Gate Voltage 25 V VGS Gate−Source Voltage −25 V IGF Forward Gate Cu rrent 10 mA TJ Junction Temperature 150 °C TJ, TSTG Storage Temperatur e Range −55 to 150 °C Stresses exc eeding those listed in the Maximum Rati ngs table may damage the device. If any of these limits are exceeded, de . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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