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FDS8958B Datasheet, Equivalent, Power MOSFET.Dual N & P-Channel Power MOSFET Dual N & P-Channel Power MOSFET |
 
 
 
Part | FDS8958B |
---|---|
Description | Dual N & P-Channel Power MOSFET |
Feature | FDS8958B Dual N & P-Channel PowerTrench ® MOSFET
FDS8958B
Dual N & P-Channel P owerTrench® MOSFET
Q1-N-Channel: 30 V, 6. 4 A, 26 mΩ Q2-P-Channel: -30 V, -4 . 5 A, 51 mΩ Features Q1: N-Channel  „ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6. 4 A „ Max rDS(on) = 39 mΩ at VGS = 4. 5 V, ID = 5. 2 A Q2: P-Channel  „ Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4. 5 A „ Max rDS(on) = 80 mΩ a t VGS = -4. 5 V, ID = -3. 3 A „ HBM ESD protection level > 3. 5 kV (Note 3) „ R oHS Compliant General Description Thes e dual N- and P-Channel enhancement mod e power field effect transistors are pr oduced using ON Semiconductor's ad . |
Manufacture | ON Semiconductor |
Datasheet |
Part | FDS8958B |
---|---|
Description | Dual N & P-Channel Power MOSFET |
Feature | FDS8958B Dual N & P-Channel PowerTrench ® MOSFET
FDS8958B
Dual N & P-Channel P owerTrench® MOSFET
Q1-N-Channel: 30 V, 6. 4 A, 26 mΩ Q2-P-Channel: -30 V, -4 . 5 A, 51 mΩ Features Q1: N-Channel  „ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6. 4 A „ Max rDS(on) = 39 mΩ at VGS = 4. 5 V, ID = 5. 2 A Q2: P-Channel  „ Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4. 5 A „ Max rDS(on) = 80 mΩ a t VGS = -4. 5 V, ID = -3. 3 A „ HBM ESD protection level > 3. 5 kV (Note 3) „ R oHS Compliant General Description Thes e dual N- and P-Channel enhancement mod e power field effect transistors are pr oduced using ON Semiconductor's ad . |
Manufacture | ON Semiconductor |
Datasheet |
 
 
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