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FDS8958B Datasheet, Equivalent, Power MOSFET.

Dual N & P-Channel Power MOSFET

Dual N & P-Channel Power MOSFET

 

 

 

Part FDS8958B
Description Dual N & P-Channel Power MOSFET
Feature FDS8958B Dual N & P-Channel PowerTrench MOSFET FDS8958B Dual N & P-Channel P owerTrench® MOSFET Q1-N-Channel: 30 V, 6.
4 A, 26 mΩ Q2-P-Channel: -30 V, -4 .
5 A, 51 mΩ Features Q1: N-Channel Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.
4 A „ Max rDS(on) = 39 mΩ at VGS = 4.
5 V, ID = 5.
2 A Q2: P-Channel Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.
5 A „ Max rDS(on) = 80 mΩ a t VGS = -4.
5 V, ID = -3.
3 A „ HBM ESD protection level > 3.
5 kV (Note 3) „ R oHS Compliant General Description Thes e dual N- and P-Channel enhancement mod e power field effect transistors are pr oduced using ON Semiconductor's ad .
Manufacture ON Semiconductor
Datasheet
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Part FDS8958B
Description Dual N & P-Channel Power MOSFET
Feature FDS8958B Dual N & P-Channel PowerTrench MOSFET FDS8958B Dual N & P-Channel P owerTrench® MOSFET Q1-N-Channel: 30 V, 6.
4 A, 26 mΩ Q2-P-Channel: -30 V, -4 .
5 A, 51 mΩ Features Q1: N-Channel Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.
4 A „ Max rDS(on) = 39 mΩ at VGS = 4.
5 V, ID = 5.
2 A Q2: P-Channel Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.
5 A „ Max rDS(on) = 80 mΩ a t VGS = -4.
5 V, ID = -3.
3 A „ HBM ESD protection level > 3.
5 kV (Note 3) „ R oHS Compliant General Description Thes e dual N- and P-Channel enhancement mod e power field effect transistors are pr oduced using ON Semiconductor's ad .
Manufacture ON Semiconductor
Datasheet
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FDS8958B

FDS8958B
FDS8958B

FDS8958B

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