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NVCR4LS1D3N08M7A Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part NVCR4LS1D3N08M7A
Description N-Channel Power MOSFET
Feature MOSFET – Power, N-Channel 80 V, 1.
27 m W NVCR4LS1D3N08M7A Features
• Typical RDS(on) = 1.
0 mW at VGS = 10 V
• Typ ical Qg(tot) = 172 nC at VGS = 10 V
• AEC−Q101 Qualified and PPAP Capable
• RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate an d Source: AlSiCu Drain: Ti−NiV−Ag ( back side of die) Passivation: Polyimid e Wafer Diameter: 8 inch Wafer sawn on UV Tape Bad dice identified in inking G ross Die Counts: 1001 6604 x 3683 6584 ± 30 x 3663 ± 30 6399.
3 x 3452.
6 343 .
1 x 477.
5 101.
6 ±19.
1 DATA SHEET www .
onsemi.
com ORDERING INFORMATION .
Manufacture ON Semiconductor
Datasheet
Download NVCR4LS1D3N08M7A Datasheet
Part NVCR4LS1D3N08M7A
Description N-Channel Power MOSFET
Feature MOSFET – Power, N-Channel 80 V, 1.
27 m W NVCR4LS1D3N08M7A Features
• Typical RDS(on) = 1.
0 mW at VGS = 10 V
• Typ ical Qg(tot) = 172 nC at VGS = 10 V
• AEC−Q101 Qualified and PPAP Capable
• RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate an d Source: AlSiCu Drain: Ti−NiV−Ag ( back side of die) Passivation: Polyimid e Wafer Diameter: 8 inch Wafer sawn on UV Tape Bad dice identified in inking G ross Die Counts: 1001 6604 x 3683 6584 ± 30 x 3663 ± 30 6399.
3 x 3452.
6 343 .
1 x 477.
5 101.
6 ±19.
1 DATA SHEET www .
onsemi.
com ORDERING INFORMATION .
Manufacture ON Semiconductor
Datasheet
Download NVCR4LS1D3N08M7A Datasheet

NVCR4LS1D3N08M7A

NVCR4LS1D3N08M7A
NVCR4LS1D3N08M7A

NVCR4LS1D3N08M7A

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