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NVCR4LS1D3N08M7A Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | NVCR4LS1D3N08M7A |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET – Power, N-Channel
80 V, 1. 27 m W NVCR4LS1D3N08M7A Features • Typical RDS(on) = 1. 0 mW at VGS = 10 V • Typ ical Qg(tot) = 172 nC at VGS = 10 V • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate an d Source: AlSiCu Drain: Ti−NiV−Ag ( back side of die) Passivation: Polyimid e Wafer Diameter: 8 inch Wafer sawn on UV Tape Bad dice identified in inking G ross Die Counts: 1001 6604 x 3683 6584 ± 30 x 3663 ± 30 6399. 3 x 3452. 6 343 . 1 x 477. 5 101. 6 ±19. 1 DATA SHEET www . onsemi. com ORDERING INFORMATION . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVCR4LS1D3N08M7A |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET – Power, N-Channel
80 V, 1. 27 m W NVCR4LS1D3N08M7A Features • Typical RDS(on) = 1. 0 mW at VGS = 10 V • Typ ical Qg(tot) = 172 nC at VGS = 10 V • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate an d Source: AlSiCu Drain: Ti−NiV−Ag ( back side of die) Passivation: Polyimid e Wafer Diameter: 8 inch Wafer sawn on UV Tape Bad dice identified in inking G ross Die Counts: 1001 6604 x 3683 6584 ± 30 x 3663 ± 30 6399. 3 x 3452. 6 343 . 1 x 477. 5 101. 6 ±19. 1 DATA SHEET www . onsemi. com ORDERING INFORMATION . |
| Manufacture | ON Semiconductor |
| Datasheet |
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