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FDD4685-F085 Datasheet, Equivalent, P-Channel MOSFET.P-Channel MOSFET P-Channel MOSFET |
| Part | FDD4685-F085 |
|---|---|
| Description | P-Channel MOSFET |
| Feature | FDD4685-F085 P-Channel PowerTrench® MOS FET
FDD4685-F085
P-Channel PowerTrench ® MOSFET
-40 V, -32 A, 35 mΩ
Feature s
Typical RDS(on) = 23 m at VGS = -10V, ID = -8. 4 A Typical RDS(on) = 30 m at VGS = -4. 5V, ID = -7 A Typical Qg(tot) = 19 nC at VGS = -5V, ID = -8. 4 A UIS Capability RoH S Compliant Qualified to AEC Q101 A pplications Inverter Power Supp lies D G S DTO-P-2A5K2 (TO-252) MOSFE T Maximum Ratings TJ = 25°C unless oth erwise noted. Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to -Source Voltage Drain Current - Continu ous (TC < 90°C, VGS=10) Pulsed Drain C u . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDD4685-F085 |
|---|---|
| Description | P-Channel MOSFET |
| Feature | FDD4685-F085 P-Channel PowerTrench® MOS FET
FDD4685-F085
P-Channel PowerTrench ® MOSFET
-40 V, -32 A, 35 mΩ
Feature s
Typical RDS(on) = 23 m at VGS = -10V, ID = -8. 4 A Typical RDS(on) = 30 m at VGS = -4. 5V, ID = -7 A Typical Qg(tot) = 19 nC at VGS = -5V, ID = -8. 4 A UIS Capability RoH S Compliant Qualified to AEC Q101 A pplications Inverter Power Supp lies D G S DTO-P-2A5K2 (TO-252) MOSFE T Maximum Ratings TJ = 25°C unless oth erwise noted. Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to -Source Voltage Drain Current - Continu ous (TC < 90°C, VGS=10) Pulsed Drain C u . |
| Manufacture | ON Semiconductor |
| Datasheet |
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