FDD4685-F085

FDD4685-F085 P-Channel PowerTrench® MOSFET FDD4685-F085 P-Channel PowerTrench® MOSFET -40 V, -32 A, 35 mΩ Features  Typical RDS(on) = 23 m at VGS = -10V, ID = -8.4 A  Typical RDS(on) = 30 m at VGS = -4.5V, ID = -7 A  Typical Qg(tot) = 19 nC at VGS = -5V, ID = -8.4 A  UIS Capability  RoHS Compliant  Qualified to AEC Q101 Applications  Inverter  Power Supplies D G S DTO-P-2A5K2 (TO-252) MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (TC < 90°C, VGS=10) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate Above 25oC TJ, TSTG RJC RJA Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient (Note 1) (Note 2) (Note 3) Ratings -40 ±20 -32 See Figure 4 121 83 0.56 -55 to + 175 1.8 40 Units V V A mJ W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking FDD4685 Device FDD4685-F085 Package D-PAK(TO-252) Reel Size 13” Tape Width 12mm Quantity 2500units Notes: 1. Current is limited by bondwire configuration. 2. Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3. pmRroeθuJsAnetniisntegthdeshuserurfaemciesofbotafhsteheejdundocrnatimionnop-utionn-stci.nagsReoθnJaCnadis1cgianus2aepr-ataond-taeomef d2boiebznyctdothepespirgemnr.a, lwrehsiliestRanθJcAe,iswdheetreertmhien...