MMBF5485

N-Channel RF Amplifier MMBF5484, MMBF5485, MMBF5486 This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. ABSOLUTE MAXIMUM RATINGS* (TA = 25°C unless otherwise noted) Symbol Rating Value Unit VDG VGS IGF TJ, Tstg Drain−Gate Voltage Gate−Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 25 V −25 V 10 mA −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *These rating are limiting values above which the serviceability of any semiconductor device may be impaired. 1. These rating are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Max Symbol Characteristic *MMBF5484−5486 Unit PD Total Device Dissipation Derate above 25°C 225 mW 1.8 mW/°C RqJC Thermal Resistance, Junction − to Case °C/W RqJA Thermal Resistance, Junction 556 to Ambient °C/W *Device mounted on FR−4 PCB 1.6” x 1.6” x 0.06”. DATA SHEET www.onsemi.com G D S NOTE: Source & Drain are interchangeable SOT−23 CASE 318−08 MARKING DIAGRAM 6xM 1 6x = Device Code (x = B, M, H) M = Date Code ORDERING INFORMA...