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MMBF5486 Dataheets PDF



Part Number MMBF5486
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel RF Amplifier
Datasheet MMBF5486 DatasheetMMBF5486 Datasheet (PDF)

N-Channel RF Amplifier MMBF5484, MMBF5485, MMBF5486 This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. ABSOLUTE MAXIMUM RATINGS* (TA = 25°C unless otherwise noted) Symbol Rating Value Unit VDG VGS IGF TJ, Tstg Drain−Gate Voltage Gate−Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 25 V −25 V 10 mA −55 to +150 °C Stresses exceeding those listed in the Max.

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N-Channel RF Amplifier MMBF5484, MMBF5485, MMBF5486 This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. ABSOLUTE MAXIMUM RATINGS* (TA = 25°C unless otherwise noted) Symbol Rating Value Unit VDG VGS IGF TJ, Tstg Drain−Gate Voltage Gate−Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 25 V −25 V 10 mA −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *These rating are limiting values above which the serviceability of any semiconductor device may be impaired. 1. These rating are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Max Symbol Characteristic *MMBF5484−5486 Unit PD Total Device Dissipation Derate above 25°C 225 mW 1.8 mW/°C RqJC Thermal Resistance, Junction − to Case °C/W RqJA Thermal Resistance, Junction 556 to Ambient °C/W *Device mounted on FR−4 PCB 1.6” x 1.6” x 0.06”. DATA SHEET www.onsemi.com G D S NOTE: Source & Drain are interchangeable SOT−23 CASE 318−08 MARKING DIAGRAM 6xM 1 6x = Device Code (x = B, M, H) M = Date Code ORDERING INFORMATION Device Package Shipping† MMBF5484 MMBF5484 MMBF5484 SOT−23 (Pb−Free) 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 1 September, 2021 − Rev. 2 Publication Order Number: MMBF5486/D MMBF5484, MMBF5485, MMBF5486 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS V(BR)GSS Gate−Source Breakdown Voltage IG = −1.0 mA, VDS = 0 −25 − − V IGSS Gate Reverse Current VGS = −20 V, VDS = 0 VGS = −20 V, VDS = 0, TA = 100°C − − −1.0 nA − − −0.2 mA VGS(off) Gate−Source Cutoff Voltage VDS = 15 V, ID = 10 nA 5484 −0.3 − −3.0 V 5485 −0.5 − −4.0 V 5486 −2.0 − −6.0 V ON CHARACTERISTICS IDSS Zero−Gate Voltage Drain Current* VDS = 15 V, VGS = 0 5484 1.0 − 5.0 mA 5485 4.0 − 10 mA 5486 8.0 − 20 mA SMALL SIGNAL CHARACTERISTICS gfs Forward Transfer Conductance VDS = 15 V, VGS = 0, f = 1.0 kHz 5484 3000 − 6000 mmhos 5485 3500 − 7000 mmhos 5486 4000 − 8000 mmhos Re(yis) Input Conductance VDS = 15 V, VGS = 0, f = 100 MHz 5484 − VDS = 15 V, VGS = 0, f = 400 kHz 5485 / − 5486 − 100 mmhos − 1000 mmhos gos Output Conductance VDS = 15 V, VGS = 0, f = 1.0 kHz 5484 − 5485 − 5486 − − 50 mmhos − 60 mmhos − 75 mmhos Re(yos) Output Cond.


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