Document
N-Channel RF Amplifier
MMBF5484, MMBF5485, MMBF5486
This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.
ABSOLUTE MAXIMUM RATINGS* (TA = 25°C unless otherwise noted)
Symbol
Rating
Value
Unit
VDG VGS IGF TJ, Tstg
Drain−Gate Voltage
Gate−Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
V
−25
V
10
mA
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *These rating are limiting values above which the serviceability of any
semiconductor device may be impaired. 1. These rating are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications
involving pulsed or low duty cycle operations.
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Max
Symbol
Characteristic
*MMBF5484−5486 Unit
PD
Total Device Dissipation
Derate above 25°C
225
mW
1.8
mW/°C
RqJC Thermal Resistance, Junction
−
to Case
°C/W
RqJA Thermal Resistance, Junction
556
to Ambient
°C/W
*Device mounted on FR−4 PCB 1.6” x 1.6” x 0.06”.
DATA SHEET www.onsemi.com
G
D S
NOTE: Source & Drain are interchangeable SOT−23 CASE 318−08
MARKING DIAGRAM
6xM 1 6x = Device Code (x = B, M, H) M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
MMBF5484 MMBF5484 MMBF5484
SOT−23 (Pb−Free)
3000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
1
September, 2021 − Rev. 2
Publication Order Number: MMBF5486/D
MMBF5484, MMBF5485, MMBF5486
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max Unit
OFF CHARACTERISTICS
V(BR)GSS Gate−Source Breakdown Voltage IG = −1.0 mA, VDS = 0
−25
−
−
V
IGSS Gate Reverse Current
VGS = −20 V, VDS = 0 VGS = −20 V, VDS = 0, TA = 100°C
−
−
−1.0
nA
−
−
−0.2
mA
VGS(off) Gate−Source Cutoff Voltage
VDS = 15 V, ID = 10 nA
5484
−0.3
−
−3.0
V
5485
−0.5
−
−4.0
V
5486
−2.0
−
−6.0
V
ON CHARACTERISTICS
IDSS Zero−Gate Voltage Drain Current* VDS = 15 V, VGS = 0
5484
1.0
−
5.0
mA
5485
4.0
−
10
mA
5486
8.0
−
20
mA
SMALL SIGNAL CHARACTERISTICS
gfs
Forward Transfer Conductance
VDS = 15 V, VGS = 0, f = 1.0 kHz
5484
3000
−
6000 mmhos
5485
3500
−
7000 mmhos
5486
4000
−
8000 mmhos
Re(yis) Input Conductance
VDS = 15 V, VGS = 0, f = 100 MHz
5484
−
VDS = 15 V, VGS = 0, f = 400 kHz
5485 /
−
5486
−
100 mmhos
−
1000 mmhos
gos Output Conductance
VDS = 15 V, VGS = 0, f = 1.0 kHz
5484
−
5485
−
5486
−
−
50 mmhos
−
60 mmhos
−
75 mmhos
Re(yos) Output Cond.