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FQB25N33TM-F085 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | FQB25N33TM-F085 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | FQB25N33TM-F085 330V N-Channel MOSFET
F QB25N33TM-F085 330V N-Channel MOSFET
Fe atures
• 25A, 330V, RDS(on) = 0. 23Ω @VGS = 10V • Low gate charge (typica l 58nC) • Low Crss (typical 40pF) • Fast switching • 100% avalanche test ed • Improved dv/dt capability • Qu alified to AEC Q101 • RoHS Compliant General Description These N-Channel en hancement mode power field effect trans istors are produced using ON Semiconduc tor’s proprietary, planar stripe, DMO S technology. This advanced technology has been especially tailored to minimiz ed on-state resistance, provide superio r switching performance, and withs . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FQB25N33TM-F085 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | FQB25N33TM-F085 330V N-Channel MOSFET
F QB25N33TM-F085 330V N-Channel MOSFET
Fe atures
• 25A, 330V, RDS(on) = 0. 23Ω @VGS = 10V • Low gate charge (typica l 58nC) • Low Crss (typical 40pF) • Fast switching • 100% avalanche test ed • Improved dv/dt capability • Qu alified to AEC Q101 • RoHS Compliant General Description These N-Channel en hancement mode power field effect trans istors are produced using ON Semiconduc tor’s proprietary, planar stripe, DMO S technology. This advanced technology has been especially tailored to minimiz ed on-state resistance, provide superio r switching performance, and withs . |
| Manufacture | ON Semiconductor |
| Datasheet |
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