STTFS015N10MCL

MOSFET - Power, Single N-Channel 100 V, 12.9 mW, 42 A STTFS015N10MCL Features Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Primary DC−DC MOSFET Synchronous Rectifier in DC−DC and AC−DC Motor Drive These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 42 A 27 45 W 18 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady State TA = 25°C PD 10 A 2.5 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 130 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +150 Single Pulse Drain−to−Source Avalanche Energy (L = 3 mH, IAS = 6 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) EAS 54 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 2.8 °C/W Junction−to−Ambient − Steady S...