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STTFS015N10MCL Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | STTFS015N10MCL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
100 V, 12. 9 mW, 42 A STTFS015N10MCL Features • Small Footprint (3. 3x3. 3 mm) for C ompact Design • Low RDS(on) to Minimi ze Conduction Losses • Low QG and Cap acitance to Minimize Driver Losses • Primary DC−DC MOSFET • Synchronous Rectifier in DC−DC and AC−DC • Mo tor Drive • These Devices are Pb−Fr ee, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Sym bol Value Unit Drain−to−Source Vol tage VDSS 100 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissip ation R . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | STTFS015N10MCL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
100 V, 12. 9 mW, 42 A STTFS015N10MCL Features • Small Footprint (3. 3x3. 3 mm) for C ompact Design • Low RDS(on) to Minimi ze Conduction Losses • Low QG and Cap acitance to Minimize Driver Losses • Primary DC−DC MOSFET • Synchronous Rectifier in DC−DC and AC−DC • Mo tor Drive • These Devices are Pb−Fr ee, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Sym bol Value Unit Drain−to−Source Vol tage VDSS 100 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissip ation R . |
| Manufacture | ON Semiconductor |
| Datasheet |
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