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FDD5680 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | FDD5680 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDD5680
March 2015
FDD5680
N-Channel, PowerTrench MOSFET
General Descripti on
This N-Channel MOSFET is produced us ing ON Semiconductor's advanced PowerTr ench process that has been especially t ailored to minimize the on-state resist ance and yet maintain low gate charge f or superior switching performance. Appl ications • DC/DC converter • Motor drives Features • 38 A, 60 V. RDS(on ) = 0. 021 Ω @ VGS = 10 V RDS(on) = 0. 025 Ω @ VGS = 6 V. • Low gate charg e (33nC typical). • Fast switching sp eed. • High performance trench techno logy for extremely low RDS(on). D D G G S TO-252 Absolute Maximum . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDD5680 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDD5680
March 2015
FDD5680
N-Channel, PowerTrench MOSFET
General Descripti on
This N-Channel MOSFET is produced us ing ON Semiconductor's advanced PowerTr ench process that has been especially t ailored to minimize the on-state resist ance and yet maintain low gate charge f or superior switching performance. Appl ications • DC/DC converter • Motor drives Features • 38 A, 60 V. RDS(on ) = 0. 021 Ω @ VGS = 10 V RDS(on) = 0. 025 Ω @ VGS = 6 V. • Low gate charg e (33nC typical). • Fast switching sp eed. • High performance trench techno logy for extremely low RDS(on). D D G G S TO-252 Absolute Maximum . |
| Manufacture | ON Semiconductor |
| Datasheet |
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