Document
Digital FET, Dual N-Channel
FDG6301N
General Description These dual N−Channel logic level enhancement mode field effect
transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
• 25 V, 0.22 A Continuous, 0.65 A Peak
♦ RDS(ON) = 4 W @ VGS = 4.5 V ♦ RDS(ON) = 5 W @ VGS = 2.7 V
• Very Low Level Gate Drive Requirements Allowing Direct
Operation in 3 V Circuits (VGS(th) < 1.5 V)
• Gate−Source Zener for ESD Ruggedness (>6 kV Human Body
Model)
• Compact Industry Standard SC70−6 Surface Mount Package • These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
FDG6301N Units
VDSS Drain−Source Voltage
25
V
VGSS Gate−Source Voltage
8
V
ID
Drain/Output Current
Continuous
0.22
A
Pulsed
0.65
PD
Maximum Power Dissipation (Note 1)
0.3
W
TJ, TSTG Operating and Storage Temperature Range
−55 to +150 °C
ESD Electrostatic Discharge Rating
6.0
kV
MIL−STD−883D
Human Body Model (100 pF / 1500 W)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
www.onsemi.com G2G2
D1 D2
S1G1 SC−88/SC70−6/SOT−363
CASE 419B−02 MARKING DIAGRAM
01M
01
= Specific Device Code
M
= Assembly Operation Month
PIN CONNECTIONS
1 or 4*
6 or 3
2 or 5
5 or 2
3 or 6
4 or 1*
*The pinouts are symmetrical; pin 1 and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 1999
1
May, 2021 − Rev. 7
Publication Order Number: FDG6301N/D
FDG6301N
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
RqJA
Thermal Resistance, Junction−to−Ambient (Note 1)
415
_C/W
1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design. RqJA = 415°C/W on minimum pad mounting on FR−4 board in still air.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Unit
OFF CHARACTERISTICS
BVDSS DBVDSS / DTJ
Drain−Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
VGS = 0 V, ID = 250 mA ID = 250 mA, Referenced to 25_C
25
−
−
25
−
V
−
mV/_C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate−Body Leakage Current
ON CHARACTERISTICS (Note 2)
VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VGS = 8 V, VDS = 0 V
−
−
1
mA
−
−
10
mA
−
−
100
nA
VGS(th) DVGS(th) / DTJ
Gate Threshold Voltage
Gate Threshold Voltage Temperature Coefficient
VDS = VGS, ID = 250 mA ID = 250 mA, Referenced to 25_C
0.65 0.85
−
−2.1
1.5
V
−
mV/_C
RDS(on)
Static Drain−Source On−Resistance
ID(on)
On−State Drain Current
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = 4.5 V, ID = 0.22 A
−
2.6
4
W
VGS = 4.5 V, ID = 0.22 A, TJ = 125_C
−
5.3
7
VGS = 2.7 V, ID = 0.19 A
−
3.7
5
VGS = 4.5 V, VDS = 5 V
0.22
−
−
A
VDS = 5 V, ID = 0.22 A
−
0.2
−
S
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
−
9.5
−
pF
−
6
−
pF
−
4.5
−
pF
tD(on) tr
Turn-On Delay Time Turn-On Rise Time
VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 W
tD(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate−Source Charge
VDS = 5 V, ID = 0.22 A, VGS = 4.5 V
Qgd
Gate−Drain Charge
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
−
5
10
ns
−
4.5
10
ns
−
4
8
ns
−
3.2
7
ns
−
0.29
0.4
nC
−
0.12
−
nC
−
0.03
−
nC
IS
Maximum Continuous Source Current
VSD
Drain−Source Diode Forward
Voltage
VGS = 0 V, IS = 0.25 A (Note 2)
−
−
0.25
A
−
0.8
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
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ID, DRAIN−SOURCE CURRENT (A)
RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCE
FDG6301N
TYPICAL PERFORMANCE CHARACTERISTICS
RDS(ON), NORMA.