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FDG6301N Dataheets PDF



Part Number FDG6301N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual N-Channel Digital FET
Datasheet FDG6301N DatasheetFDG6301N Datasheet (PDF)

Digital FET, Dual N-Channel FDG6301N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features • 25 V, 0.22 A Continuous, 0.65 A Peak.

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Digital FET, Dual N-Channel FDG6301N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features • 25 V, 0.22 A Continuous, 0.65 A Peak ♦ RDS(ON) = 4 W @ VGS = 4.5 V ♦ RDS(ON) = 5 W @ VGS = 2.7 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V) • Gate−Source Zener for ESD Ruggedness (>6 kV Human Body Model) • Compact Industry Standard SC70−6 Surface Mount Package • These Devices are Pb−Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter FDG6301N Units VDSS Drain−Source Voltage 25 V VGSS Gate−Source Voltage 8 V ID Drain/Output Current Continuous 0.22 A Pulsed 0.65 PD Maximum Power Dissipation (Note 1) 0.3 W TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C ESD Electrostatic Discharge Rating 6.0 kV MIL−STD−883D Human Body Model (100 pF / 1500 W) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com G2G2 D1 D2 S1G1 SC−88/SC70−6/SOT−363 CASE 419B−02 MARKING DIAGRAM 01M 01 = Specific Device Code M = Assembly Operation Month PIN CONNECTIONS 1 or 4* 6 or 3 2 or 5 5 or 2 3 or 6 4 or 1* *The pinouts are symmetrical; pin 1 and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 1999 1 May, 2021 − Rev. 7 Publication Order Number: FDG6301N/D FDG6301N THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit RqJA Thermal Resistance, Junction−to−Ambient (Note 1) 415 _C/W 1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design. RqJA = 415°C/W on minimum pad mounting on FR−4 board in still air. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS DBVDSS / DTJ Drain−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 mA ID = 250 mA, Referenced to 25_C 25 − − 25 − V − mV/_C IDSS Zero Gate Voltage Drain Current IGSS Gate−Body Leakage Current ON CHARACTERISTICS (Note 2) VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VGS = 8 V, VDS = 0 V − − 1 mA − − 10 mA − − 100 nA VGS(th) DVGS(th) / DTJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250 mA ID = 250 mA, Referenced to 25_C 0.65 0.85 − −2.1 1.5 V − mV/_C RDS(on) Static Drain−Source On−Resistance ID(on) On−State Drain Current gFS Forward Transconductance DYNAMIC CHARACTERISTICS VGS = 4.5 V, ID = 0.22 A − 2.6 4 W VGS = 4.5 V, ID = 0.22 A, TJ = 125_C − 5.3 7 VGS = 2.7 V, ID = 0.19 A − 3.7 5 VGS = 4.5 V, VDS = 5 V 0.22 − − A VDS = 5 V, ID = 0.22 A − 0.2 − S Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) VDS = 10 V, VGS = 0 V, f = 1.0 MHz − 9.5 − pF − 6 − pF − 4.5 − pF tD(on) tr Turn-On Delay Time Turn-On Rise Time VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 W tD(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate−Source Charge VDS = 5 V, ID = 0.22 A, VGS = 4.5 V Qgd Gate−Drain Charge DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS − 5 10 ns − 4.5 10 ns − 4 8 ns − 3.2 7 ns − 0.29 0.4 nC − 0.12 − nC − 0.03 − nC IS Maximum Continuous Source Current VSD Drain−Source Diode Forward Voltage VGS = 0 V, IS = 0.25 A (Note 2) − − 0.25 A − 0.8 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0% www.onsemi.com 2 ID, DRAIN−SOURCE CURRENT (A) RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCE FDG6301N TYPICAL PERFORMANCE CHARACTERISTICS RDS(ON), NORMA.


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