DatasheetsPDF.com

FDG6301N Datasheet, Equivalent, Digital FET.

Dual N-Channel Digital FET

Dual N-Channel Digital FET

 

 

 

Part FDG6301N
Description Dual N-Channel Digital FET
Feature Digital FET, Dual N-Channel FDG6301N G eneral Description These dual N−Chann el logic level enhancement mode field e ffect transistors are produced using ON Semiconductor’s proprietary, high ce ll density, DMOS technology.
This very high density process is especially tail ored to minimize on−state resistance.
This device has been designed especial ly for low voltage applications as a re placement for bipolar digital transisto rs and small signal MOSFETs.
Features 25 V, 0.
22 A Continuous, 0.
65 A Peak ♦ RDS(ON) = 4 W @ VGS = 4.
5 V ♦ RD S(ON) = 5 W @ VGS = 2.
7 V
• Very Low Level Gate Drive Requirement .
Manufacture ON Semiconductor
Datasheet
Download FDG6301N Datasheet
Part FDG6301N
Description Dual N-Channel Digital FET
Feature Digital FET, Dual N-Channel FDG6301N G eneral Description These dual N−Chann el logic level enhancement mode field e ffect transistors are produced using ON Semiconductor’s proprietary, high ce ll density, DMOS technology.
This very high density process is especially tail ored to minimize on−state resistance.
This device has been designed especial ly for low voltage applications as a re placement for bipolar digital transisto rs and small signal MOSFETs.
Features 25 V, 0.
22 A Continuous, 0.
65 A Peak ♦ RDS(ON) = 4 W @ VGS = 4.
5 V ♦ RD S(ON) = 5 W @ VGS = 2.
7 V
• Very Low Level Gate Drive Requirement .
Manufacture ON Semiconductor
Datasheet
Download FDG6301N Datasheet

FDG6301N

FDG6301N
FDG6301N

FDG6301N

Recommended third-party FDG6301N Datasheet

 

 

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)