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FDG6301N Datasheet, Equivalent, Digital FET.Dual N-Channel Digital FET Dual N-Channel Digital FET |
　
　
　
| Part | FDG6301N |
|---|---|
| Description | Dual N-Channel Digital FET |
| Feature | Digital FET, Dual N-Channel
FDG6301N
G eneral Description These dual N−Chann el logic level enhancement mode field e ffect
transistors are produced using ON Semiconductor’s proprietary, high ce ll density, DMOS technology. This very high density process is especially tail ored to minimize on−state resistance. This device has been designed especial ly for low voltage applications as a re placement for bipolar digital transisto rs and small signal MOSFETs. Features â €¢ 25 V, 0. 22 A Continuous, 0. 65 A Peak ♦ RDS(ON) = 4 W @ VGS = 4. 5 V ♦ RD S(ON) = 5 W @ VGS = 2. 7 V • Very Low Level Gate Drive Requirement . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDG6301N |
|---|---|
| Description | Dual N-Channel Digital FET |
| Feature | Digital FET, Dual N-Channel
FDG6301N
G eneral Description These dual N−Chann el logic level enhancement mode field e ffect
transistors are produced using ON Semiconductor’s proprietary, high ce ll density, DMOS technology. This very high density process is especially tail ored to minimize on−state resistance. This device has been designed especial ly for low voltage applications as a re placement for bipolar digital transisto rs and small signal MOSFETs. Features â €¢ 25 V, 0. 22 A Continuous, 0. 65 A Peak ♦ RDS(ON) = 4 W @ VGS = 4. 5 V ♦ RD S(ON) = 5 W @ VGS = 2. 7 V • Very Low Level Gate Drive Requirement . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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