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NTMTS0D4N04CL Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | NTMTS0D4N04CL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
40 V, 0 . 4 mW, 553. 8 A NTMTS0D4N04CL Features • Small Footprint (8x8 mm) for Compa ct Design • Low RDS(on) to Minimize C onduction Losses • Low QG and Capacit ance to Minimize Driver Losses • Thes e Devices are Pb−Free, Halogen Free/B FR Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuums • UAV/Drones, Materi al Handling • BMS/Storage, Home Autom ation MAXIMUM RATINGS (TJ = 25°C unle ss otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain TC = . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NTMTS0D4N04CL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
40 V, 0 . 4 mW, 553. 8 A NTMTS0D4N04CL Features • Small Footprint (8x8 mm) for Compa ct Design • Low RDS(on) to Minimize C onduction Losses • Low QG and Capacit ance to Minimize Driver Losses • Thes e Devices are Pb−Free, Halogen Free/B FR Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuums • UAV/Drones, Materi al Handling • BMS/Storage, Home Autom ation MAXIMUM RATINGS (TJ = 25°C unle ss otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain TC = . |
| Manufacture | ON Semiconductor |
| Datasheet |
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