NTMTS0D4N04CL

MOSFET - Power, Single N-Channel 40 V, 0.4 mW, 553.8 A NTMTS0D4N04CL Features Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling BMS/Storage, Home Automation MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 25°C ID Current RqJC (Note 2) Steady TC = 100°C ID Power Dissipation RqJC (Note 2) State TC = 25°C PD TC = 100°C PD 553.8 A 394.8 A 244 W 122 W Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady TA = 100°C ID State TA = 25°C PD TA = 100°C PD 79.8 A 56.4 A 5.0 W 2.5 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C + 175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 70 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 203.4 A EAS 4454 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESI...