FDMC4D9P20X8

FDMC4D9P20X8 P‐Channel Power Trench) MOSFET −20 V, −75 A, 4.9 mW General Description This P−Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness. Features Max rDS(on) = 4.9 mW at VGS = −4.5 V, ID = −18 A Max rDS(on) = 16.4 mW at VGS = −1.8 V, ID = −9 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Surface Mount Package These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Load Switch Battery Management Power Management Reverse Polarity Protection MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage −20 V VGS Gate to Source Voltage ±12 V ID Drain Current: A Continuous, TC = 25°C (Note 5) −75 Continuous, TC = 100°C (Note 5) −47 Continuous, TA = 25°C (Note 1a) −18 Pulsed (Note 4) −335 EAS Single Pulse Avalanche Energy (Note 3) 54 mJ PD TJ, TSTG Power Dissipation: TC = 25°C TA = 25°C (Note 1a) Operating and Storage Junction Temperature Range W 40 2.4 −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com VDS −20 V RDS(ON) MAX 4.9 mW @ −4.5 V 6.5 mW @ −2.5 V 16.4 mW @ −1.8 V I...