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FQA6N90C-F109 Datasheet, Equivalent, N-Channel MOSFET.

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part FQA6N90C-F109
Description N-Channel MOSFET
Feature FQA6N90C-F109 — N-Channel QFET® MOSFE T FQA6N90C-F109 N-Channel QFET® MOSFE T 900 V, 6 A, 2.
3 Ω Features
• 6 A, 900 V, RDS(on) = 2.
3 Ω (Max.
) @ VGS = 10 V, ID = 3 A
• Low Gate Charge (T yp.
30 nC)
• Low Crss (Typ.
11 pF) 100% Avalanche Tested
• RoHS Compli ant Description This N-Channel enhance ment mode power MOSFET is produced usin g ON Semiconductor’s proprietary plan ar stripe and DMOS technology.
This adv anced MOSFET technology has been especi ally tailored to reduce on-state resist ance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitab .
Manufacture ON Semiconductor
Datasheet
Download FQA6N90C-F109 Datasheet
Part FQA6N90C-F109
Description N-Channel MOSFET
Feature FQA6N90C-F109 — N-Channel QFET® MOSFE T FQA6N90C-F109 N-Channel QFET® MOSFE T 900 V, 6 A, 2.
3 Ω Features
• 6 A, 900 V, RDS(on) = 2.
3 Ω (Max.
) @ VGS = 10 V, ID = 3 A
• Low Gate Charge (T yp.
30 nC)
• Low Crss (Typ.
11 pF) 100% Avalanche Tested
• RoHS Compli ant Description This N-Channel enhance ment mode power MOSFET is produced usin g ON Semiconductor’s proprietary plan ar stripe and DMOS technology.
This adv anced MOSFET technology has been especi ally tailored to reduce on-state resist ance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitab .
Manufacture ON Semiconductor
Datasheet
Download FQA6N90C-F109 Datasheet

FQA6N90C-F109

FQA6N90C-F109
FQA6N90C-F109

FQA6N90C-F109

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