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FQA6N90C-F109 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
　
　
　
| Part | FQA6N90C-F109 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | FQA6N90C-F109 — N-Channel QFET® MOSFE T
FQA6N90C-F109
N-Channel QFET® MOSFE T
900 V, 6 A, 2. 3 Ω Features • 6 A, 900 V, RDS(on) = 2. 3 Ω (Max. ) @ VGS = 10 V, ID = 3 A • Low Gate Charge (T yp. 30 nC) • Low Crss (Typ. 11 pF) †¢ 100% Avalanche Tested • RoHS Compli ant Description This N-Channel enhance ment mode power MOSFET is produced usin g ON Semiconductor’s proprietary plan ar stripe and DMOS technology. This adv anced MOSFET technology has been especi ally tailored to reduce on-state resist ance, and to provide superior switching performance and high avalanche energy strength. These devices are suitab . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FQA6N90C-F109 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | FQA6N90C-F109 — N-Channel QFET® MOSFE T
FQA6N90C-F109
N-Channel QFET® MOSFE T
900 V, 6 A, 2. 3 Ω Features • 6 A, 900 V, RDS(on) = 2. 3 Ω (Max. ) @ VGS = 10 V, ID = 3 A • Low Gate Charge (T yp. 30 nC) • Low Crss (Typ. 11 pF) †¢ 100% Avalanche Tested • RoHS Compli ant Description This N-Channel enhance ment mode power MOSFET is produced usin g ON Semiconductor’s proprietary plan ar stripe and DMOS technology. This adv anced MOSFET technology has been especi ally tailored to reduce on-state resist ance, and to provide superior switching performance and high avalanche energy strength. These devices are suitab . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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