IRF644B — N-Channel BFET MOSFET
IRF644B
N-Channel BFET MOSFET
250 V, 14 A, 280 mΩ
Description
These N-Channel enhancem...
IRF644B — N-Channel BFET MOSFET
IRF644B
N-Channel BFET MOSFET
250 V, 14 A, 280 mΩ
Description
These N-Channel enhancement mode power field effect
transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Features
14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V Low gate charge (Typ. 47 nC) Low Crss (Typ. 30 pF) Fast Switching 100% Avalanche Tested Improved dv/dt Capability
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
S
IRF644B_FP001 250 14 8.9 56 ± 30 480 14 13.9 4.8 139 1.11
-55 to +150
300
Thermal Characteristics
Symbol RθJC RθCS RθJA
Parameter Thermal Resistance, Junction-to-Case Thermal ...