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FDV301N-F169 Datasheet, Equivalent, Digital FET.

N-Channel Digital FET

N-Channel Digital FET

 

 

 

Part FDV301N-F169
Description N-Channel Digital FET
Feature Digital FET, N-Channel FDV301N, FDV301N- F169 General Description This N−Chann el logic level enhancement mode field e ffect transistor is produced using onse mi’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to mini mize on−state resistance.
This device has been designed especially for low v oltage applications as a replacement fo r digital transistors.
Since bias resis tors are not required, this one N−cha nnel FET can replace several different digital transistors, with different bia s resistor values.
Features
• 25 V, 0 .
22 A Continuous, 0.
5 A .
Manufacture ON Semiconductor
Datasheet
Download FDV301N-F169 Datasheet
Part FDV301N-F169
Description N-Channel Digital FET
Feature Digital FET, N-Channel FDV301N, FDV301N- F169 General Description This N−Chann el logic level enhancement mode field e ffect transistor is produced using onse mi’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to mini mize on−state resistance.
This device has been designed especially for low v oltage applications as a replacement fo r digital transistors.
Since bias resis tors are not required, this one N−cha nnel FET can replace several different digital transistors, with different bia s resistor values.
Features
• 25 V, 0 .
22 A Continuous, 0.
5 A .
Manufacture ON Semiconductor
Datasheet
Download FDV301N-F169 Datasheet

FDV301N-F169

FDV301N-F169
FDV301N-F169

FDV301N-F169

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