NTBGS4D1N15MC

MOSFET - Single N-Channel 150 V, 4.1 mW, 185 A NTBGS4D1N15MC Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling BMS/Storage, Home Automation MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 150 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) ID Steady State TC = 25°C PD 185 A 316 W Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) ID Steady State TA = 25°C PD 20 A 3.7 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 2564 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL = 81.5 Apk, L = 0.1 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 263 A EAS 332 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, th...