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NTBGS4D1N15MC Datasheet, Equivalent, N-Channel MOSFET.Single N-Channel MOSFET Single N-Channel MOSFET |
　
　
　
| Part | NTBGS4D1N15MC |
|---|---|
| Description | Single N-Channel MOSFET |
| Feature | MOSFET - Single N-Channel
150 V, 4. 1 mW, 185 A NTBGS4D1N15MC Features • Low RDS(on) to Minimize Conduction Losses â €¢ Low QG and Capacitance to Minimize D river Losses • Lowers Switching Noise /EMI • These Devices are Pb−Free, H alogen Free/BFR Free and are RoHS Compl iant Typical Applications • Power Too ls, Battery Operated Vacuums • UAV/Dr ones, Material Handling • BMS/Storage , Home Automation MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parame ter Symbol Value Unit Drain−to−So urce Voltage VDSS 150 V Gate−to∠’Source Voltage VGS ±20 V Continuo us Drain Current RqJC (Note 2) Power Di s . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NTBGS4D1N15MC |
|---|---|
| Description | Single N-Channel MOSFET |
| Feature | MOSFET - Single N-Channel
150 V, 4. 1 mW, 185 A NTBGS4D1N15MC Features • Low RDS(on) to Minimize Conduction Losses â €¢ Low QG and Capacitance to Minimize D river Losses • Lowers Switching Noise /EMI • These Devices are Pb−Free, H alogen Free/BFR Free and are RoHS Compl iant Typical Applications • Power Too ls, Battery Operated Vacuums • UAV/Dr ones, Material Handling • BMS/Storage , Home Automation MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parame ter Symbol Value Unit Drain−to−So urce Voltage VDSS 150 V Gate−to∠’Source Voltage VGS ±20 V Continuo us Drain Current RqJC (Note 2) Power Di s . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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