| DatasheetsPDF.com |
FDU8896 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
　
　
　
| Part | FDU8896 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDD8896 / FDU8896
FDD8896 / FDU8896
N-C hannel PowerTrench® MOSFET 30V, 94A, 5 . 7mΩ General Description This N-Chann el MOSFET has been designed specificall y to improve the overall efficiency of DC/DC converters using either synchrono us or conventional switching PWM contro llers. It has been optimized for low ga te charge, low rDS(ON) and fast switchi ng speed. Applications • DC/DC conver ters Features • rDS(ON) = 5. 7mΩ, V GS = 10V, ID = 35A • rDS(ON) = 6. 8mâ„ ¦, VGS = 4. 5V, ID = 35A • High perfor mance trench technology for extremely l ow rDS(ON) • Low gate charge • High power and current handling capab . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDU8896 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDD8896 / FDU8896
FDD8896 / FDU8896
N-C hannel PowerTrench® MOSFET 30V, 94A, 5 . 7mΩ General Description This N-Chann el MOSFET has been designed specificall y to improve the overall efficiency of DC/DC converters using either synchrono us or conventional switching PWM contro llers. It has been optimized for low ga te charge, low rDS(ON) and fast switchi ng speed. Applications • DC/DC conver ters Features • rDS(ON) = 5. 7mΩ, V GS = 10V, ID = 35A • rDS(ON) = 6. 8mâ„ ¦, VGS = 4. 5V, ID = 35A • High perfor mance trench technology for extremely l ow rDS(ON) • Low gate charge • High power and current handling capab . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |