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FDBL86561-F085 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | FDBL86561-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDBL86561-F085 N-Channel PowerTrench® M OSFET
FDBL86561-F085
N-Channel PowerTr ench® MOSFET
60 V, 300 A, 1. 1 mΩ Fea tures Typical RDS(on) = 0. 85 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot ) = 170 nC at VGS = 10V, ID = 80 A U IS Capability RoHS Compliant Qual ified to AEC Q101 Applications Aut omotive Engine Control PowerTrain M anagement G Solenoid and Motor Dri vers Integrated Starter/Alternator Primary Switch for 12V Systems MOS FET Maximum Ratings TJ = 25°C unless o therwise noted. Symbol Parameter VDS S VGS ID Drain-to-Source Voltage Gate- to-Source Voltage Drain Curre . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDBL86561-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDBL86561-F085 N-Channel PowerTrench® M OSFET
FDBL86561-F085
N-Channel PowerTr ench® MOSFET
60 V, 300 A, 1. 1 mΩ Fea tures Typical RDS(on) = 0. 85 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot ) = 170 nC at VGS = 10V, ID = 80 A U IS Capability RoHS Compliant Qual ified to AEC Q101 Applications Aut omotive Engine Control PowerTrain M anagement G Solenoid and Motor Dri vers Integrated Starter/Alternator Primary Switch for 12V Systems MOS FET Maximum Ratings TJ = 25°C unless o therwise noted. Symbol Parameter VDS S VGS ID Drain-to-Source Voltage Gate- to-Source Voltage Drain Curre . |
| Manufacture | ON Semiconductor |
| Datasheet |
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