N-Channel Power MOSFET
FDBL86561-F085 N-Channel PowerTrench® MOSFET
FDBL86561-F085
N-Channel PowerTrench® MOSFET
60 V, 300 A, 1.1 mΩ
Features...
Description
FDBL86561-F085 N-Channel PowerTrench® MOSFET
FDBL86561-F085
N-Channel PowerTrench® MOSFET
60 V, 300 A, 1.1 mΩ
Features
Typical RDS(on) = 0.85 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 170 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101
Applications
Automotive Engine Control
PowerTrain Management
G
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
ID
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
Power Dissipation
PD
Derate Above 25oC
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C TC = 25°C
(Note 2)
(Note 3)
D
S
Ratings 60 ±20 300
See Figure 4 1167 429 2.86
-55 to + 175 0.35 43
Units V V
A
mJ W W/oC oC oC/W oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.57mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface presented here is
of the based
drain pins. RθJC is on mounting on a 1
guaranteed by design, in2 pad of 2oz copper.
while
RθJAis
dete...
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