P-Channel Power MOSFET
MOSFET – P-Channel, POWERTRENCH)
-20 V, -75 A, 4.9 mW
FDMC6696P
General Description This P−Channel MOSFET is produced us...
Description
MOSFET – P-Channel, POWERTRENCH)
-20 V, -75 A, 4.9 mW
FDMC6696P
General Description This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness.
Features
Max RDS(on) = 4.9 mW at VGS = −4.5 V, ID = −18 A Max RDS(on) = 16.4 mW at VGS = −1.8 V, ID = −9 A High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability in a Widely Used
Surface Mount Package
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Load Switch Battery Management Power Management Reverse Polarity Protection
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain to Source Voltage
−20
V
VGS
Gate to Source Voltage
±12
V
ID
Drain Current:
A
Continuous, TC = 25°C (Note 5)
−75
Continuous, TC = 100°C (Note 5)
−47
Continuous, TA = 25°C (Note 1a)
−18
Pulsed (Note 4)
−335
EAS
Single Pulse Avalanche Energy
(Note 3)
54
mJ
PD TJ, TSTG
Power Dissipation: TC = 25°C TA = 25°C (Note 1a)
Operating and Storage Junction Temperature Range
W 40 2.4
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
DATA SHEET www.onsemi.com
VDS −20 V
RDS(ON) MAX 4.9 mW @ −4.5 V 6.5 mW @ −2.5 V 16.4 mW @ −1.8 V
ID MAX...
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